2N5541 Specs and Replacement

Type Designator: 2N5541

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1.2 W

Maximum Collector-Base Voltage |Vcb|: 175 V

Maximum Collector-Emitter Voltage |Vce|: 130 V

Maximum Emitter-Base Voltage |Veb|: 8 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 20 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO5

 2N5541 Substitution

- BJT ⓘ Cross-Reference Search

 

2N5541 datasheet

 9.1. Size:56K  vishay

 2n5545-7.pdf pdf_icon

2N5541

2N5545/46/47/JANTX/JANTXV Vishay Siliconix Monolithic N-Channel JFET Duals PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Max (pA) jVGS1 VGS2j Max (mV) 2N5545 0.5 to 4.5 50 1.5 50 5 2N5546 0.5 to 4.5 50 1.5 50 10 2N5547 0.5 to 4.5 50 1.5 50 15 FEATURES BENEFITS APPLICATIONS D Monolithic Design D Tight Differential Match... See More ⇒

 9.2. Size:51K  crystaloncs

 2n5543.pdf pdf_icon

2N5541

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Detailed specifications: 2N5534, 2N5535, 2N5536, 2N5537, 2N5538, 2N5539, 2N554, 2N5540, D880, 2N5542, 2N555, 2N5550, 2N5551, 2N5552, 2N5552-1, 2N5552-2, 2N5552-4

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