2N5541 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N5541
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.2 W
Maximum Collector-Base Voltage |Vcb|: 175 V
Maximum Collector-Emitter Voltage |Vce|: 130 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO5
2N5541 Transistor Equivalent Substitute - Cross-Reference Search
2N5541 Datasheet (PDF)
9.1. Size:56K vishay
2n5545-7.pdf
2n5545-7.pdf
2N5545/46/47/JANTX/JANTXVVishay SiliconixMonolithic N-Channel JFET DualsPRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Max (pA) jVGS1 VGS2j Max (mV)2N5545 0.5 to 4.5 50 1.5 50 52N5546 0.5 to 4.5 50 1.5 50 102N5547 0.5 to 4.5 50 1.5 50 15FEATURES BENEFITS APPLICATIONSD Monolithic Design D Tight Differential Match
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
