All Transistors. 2N5551 Datasheet

 

2N5551 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N5551

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.31 W

Maximum Collector-Base Voltage |Vcb|: 180 V

Maximum Collector-Emitter Voltage |Vce|: 160 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 135 °C

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 6 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: TO92

2N5551 Transistor Equivalent Substitute - Cross-Reference Search

 

2N5551 Datasheet (PDF)

0.1. 2n5550 2n5551.pdf Size:188K _motorola

2N5551
2N5551

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N5550/DAmplifier Transistors2N5550NPN Silicon*2N5551*Motorola Preferred DeviceCOLLECTOR32BASE1EMITTER123

0.2. 2n5550 2n5551 3.pdf Size:49K _philips

2N5551
2N5551

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1862N5550; 2N5551NPN high-voltage transistors1999 Apr 23Product specificationSupersedes data of 1997 Apr 09Philips Semiconductors Product specificationNPN high-voltage transistors 2N5550; 2N5551FEATURES PINNING Low current (max. 300 mA)PIN DESCRIPTION High voltage (max. 160 V).1 collector2 baseAPPLICATION

 0.3. 2n5550 2n5551 2.pdf Size:53K _philips

2N5551
2N5551

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1862N5550; 2N5551NPN high-voltage transistorsProduct specification 2004 Oct 28Supersedes data of 1999 Apr 23Philips Semiconductors Product specificationNPN high-voltage transistors 2N5550; 2N5551FEATURES PINNING Low current (max. 300 mA)PIN DESCRIPTION High voltage (max. 160 V).1 collector2 baseAPPLICATIONS

0.4. 2n5551hr.pdf Size:428K _st

2N5551
2N5551

2N5551HRHi-Rel NPN bipolar transistor 160 V, 0.5 ADatasheet - production dataFeatures3BVCEO 160 V11 IC (max) 0.5 A223HFE at 5 V - 10 mA > 80 TO-18 LCC-33 Hermetic packages4 ESCC and JANS qualified1 Up to 100 krad(Si) low dose rate2UBDescriptionPin 4 in UB is connected to the metallic lid.The 2N5551HR is a silicon planar NPN transistor spe

 0.5. 2n5551.pdf Size:216K _fairchild_semi

2N5551
2N5551

April 20062N5551- MMBT5551tmNPN General Purpose AmplifierFeatures This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Suffix -C means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base) Suffix -Y means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V)2N5551 MMBT555132TO-92SOT-2

0.6. 2n5551 mmbt5551.pdf Size:171K _fairchild_semi

2N5551
2N5551

June 20092N5551 / MMBT5551NPN General Purpose AmplifierFeatures This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Suffix -C means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base) Suffix -Y means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V) 2N5551 MMBT555132TO-92SOT-23

0.7. 2n5551.pdf Size:53K _samsung

2N5551
2N5551

2N5551 NPN EPITAXIAL SILICON TRANSISTORAMPLIFIER TRANSISTOR Collector-Emitter Voltage: VCEO= 160V TO-92 Collector Dissipation: PC (max)=625mWABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 180 VCollector-Emitter Voltage VCEO 160 VEmitter-Base Voltage VEBO 6 VCollector Current IC 600 mACollector Dissipation PC 625 mWJu

0.8. 2n5550 2n5551.pdf Size:64K _central

2N5551

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

0.9. 2n5551 to-92.pdf Size:208K _mcc

2N5551
2N5551

MCCMicro Commercial ComponentsTM2N555120736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features This device is designed for general purpose high voltage amplifiers NPN Generaland gas discharge display drivers.Purpose Amplifier Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1Tr

0.10. 2n5550 2n5551.pdf Size:88K _onsemi

2N5551
2N5551

2N5550, 2N5551Preferred DeviceAmplifier TransistorsNPN SiliconFeatures These are Pb-Free Devices*http://onsemi.comCOLLECTOR3MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector - Emitter Voltage VCEO Vdc2N5550 14012N5551 160EMITTERCollector - Base Voltage VCBO Vdc2N5550 1602N5551 180Emitter - Base Voltage VEBO 6.0 VdcTO-92CASE 29Collector Curr

0.11. 2n5551g.pdf Size:189K _utc

2N5551
2N5551

UNISONIC TECHNOLOGIES CO., LTD 2N5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High collector-emitter voltage: VCEO=160V * High current gain APPLICATIONS * Telephone switching circuit * Amplifier ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 2N5551L-x-AB3-R 2N5551G-x-

0.12. 2n5551.pdf Size:178K _utc

2N5551
2N5551

UNISONIC TECHNOLOGIES CO., LTD 2N5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High collector-emitter voltage: VCEO=160V * High current gain APPLICATIONS * Telephone switching circuit * Amplifier ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 2N5551L-x-AB3-R 2N5551G-x-

0.13. 2n5551.pdf Size:217K _auk

2N5551
2N5551

2N5551NPN Silicon TransistorDescriptions PIN Connection General purpose amplifier C High voltage application Features B High collector breakdown voltage : VCBO = 180V, VCEO = 160V Low collector saturation voltage : EVCE(sat)=0.5V(MAX.) TO-92 Complementary pair with 2N5401 Ordering Information Type NO. Marking Package Code 2N5551 2N5551

0.14. 2n5551cn.pdf Size:249K _auk

2N5551
2N5551

2N5551CNSemiconductor Semiconductor NPN Silicon TransistorDescriptions General purpose amplifier High voltage application Features High collector breakdown voltage : VCBO = 180V, VCEO = 160V Low collector saturation voltage : VCE(sat)=0.5V(MAX.) Ordering Information Type NO. Marking Package Code 2N5551CN 2N5551C TO-92NOutline Dimensions unit : mm 4.20

0.15. 2n5551n.pdf Size:249K _auk

2N5551
2N5551

2N5551NSemiconductor Semiconductor NPN Silicon TransistorDescriptions General purpose amplifier High voltage application Features High collector breakdown voltage : VCBO = 180V, VCEO = 160V Low collector saturation voltage : VCE(sat)=0.5V(MAX.) Complementary pair with 2N5401N Ordering Information Type NO. Marking Package Code 2N5551N 2N5551 TO-9

0.16. 2n3904 2n3906 2n5401 2n5551 2sa1271 2sa1273 2sa1275 2sa1276 2sa1366 2sa1657 2sa1658 2sb1366 2sb988 2sc3190 2sc3191 2sc3192.pdf Size:495K _no

2N5551
2N5551

0.17. 2n5551csm.pdf Size:31K _semelab

2N5551
2N5551

2N5551CSM HIGH VOLTAGE NPNSWITCHING TRANSISTOR IN AHERMETICALLY SEALEDMECHANICAL DATACERAMIC SURFACE MOUNT PACKAGEDimensions in mm (inches)FOR HIGH RELIABILITY APPLICATIONS0.51 0.10(0.02 0.004) 0.31 FEATURESrad.(0.012) SILICON PLANAR EPITAXIAL NPN 3TRANSISTOR HERMETIC CERAMIC SURFACE MOUNTPACKAGE (SOT23 COMPATIBLE)21 CECC SCREENING OPTIONS1.9

0.18. 2n5551dcsm.pdf Size:10K _semelab

2N5551

2N5551DCSMDimensions in mm (inches). Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar NPN Devices. A0.236 5rad. (0.009) V = 160V CEO6.22 0.13 A = 1.27 0.13I = 0.6A C(0.

0.19. 2n5551.pdf Size:203K _secos

2N5551
2N5551

2N5551NPN Silicon Elektronische BauelementeGeneral Purpose Transistor RoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeTO-924.550.2 3.50.2FEATURES* Switching and amplification in high voltage * Low current(max. 600mA) * High voltage(max.180v) 0.43+0.080.0746+0.10. 0.1(1.27 Typ.)1: Emitter+0.21.250.22: Base1 2 33: Colle

0.20. 2n5551.pdf Size:279K _cdil

2N5551
2N5551

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5551TO- 92CBECBEHigh Voltage NPN Transistor For General Purpose And Telephony Applications.ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)DESCRIPTION SYMBOL VALUE UNITCollector -Emitter Voltage VCEO 160 VCollector

0.21. 2n5551sc.pdf Size:339K _kec

2N5551

SEMICONDUCTOR 2N5551SCTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION.EL B LFEATURES High Collector Breakdwon VoltageDIM MILLIMETERS_+A 2.90 0.123: VCBO=180V, VCEO=160VB 1.30+0.20/-0.15C 1.30 MAXLow Leakage Current. 1D 0.40+0.15/-0.05: ICBO=50nA(Max.) VCB=120V E 2.40+0.30/-0.20G 1.90Low Saturatio

0.22. 2n5551s.pdf Size:33K _kec

2N5551
2N5551

SEMICONDUCTOR 2N5551STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION.EL B LDIM MILLIMETERSFEATURES _+2.93 0.20AB 1.30+0.20/-0.15High Collector Breakdwon VoltageC 1.30 MAX2: VCBO=180V, VCEO=160V 3 D 0.45+0.15/-0.05E 2.40+0.30/-0.20Low Leakage Current.1G 1.90H 0.95: ICBO=50nA(Max.) VCB=120VJ 0.13+0.1

0.23. 2n5551.pdf Size:32K _kec

2N5551
2N5551

SEMICONDUCTOR 2N5551TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.HIGH VOLTAGE APPLICATION.B CFEATURES High Collector Breakdwon VoltageN DIM MILLIMETERS: VCBO=180V, VCEO=160VA 4.70 MAXEKLow Leakage Current. B 4.80 MAXGC 3.70 MAXD: ICBO=50nA(Max.), VCB=120VD 0.45E 1.00Low Saturation VoltageF 1.27G 0.85: VCE(sat)=0.2V(Max.),

0.24. 2n5551c.pdf Size:32K _kec

2N5551
2N5551

SEMICONDUCTOR 2N5551CTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.HIGH VOLTAGE APPLICATION.B CFEATURES High Collector Breakdwon VoltageN DIM MILLIMETERS: VCBO=180V, VCEO=160VA 4.70 MAXEKLow Leakage Current. B 4.80 MAXGC 3.70 MAXD: ICBO=50nA(Max.), VCB=120VD 0.45E 1.00Low Saturation VoltageF 1.27G 0.85: VCE(sat)=0.2V(Max.),

0.25. 2n5551.pdf Size:220K _lge

2N5551
2N5551

2N5551(NPN) TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. BASE 3. COLLECTOR FeaturesSwitching and amplification in high voltage Applications such as telephony Low current(max. 600mA) High voltage(max.180V) MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 180 V

0.26. 2n5551.pdf Size:386K _wietron

2N5551
2N5551

2N5551NPN TransistorsTO-921. EMITTER122. BASE33. COLLECTORABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating Symbol2N5551 UnitCollector-Emitter Voltage VCEO 160 VdcCollector-Base Voltage VCBO 180VdcEmitter-Base VOltage VEBO6.0 VdcCollector Current IC600 mAdcPDTotal Device Dissipation T =25 C WA0.625Junction Temperature T 150j CStorage, Temperature Tstg

0.27. h2n5551.pdf Size:52K _hsmc

2N5551
2N5551

Spec. No. : HE6219HI-SINCERITYIssued Date : 1992.09.21Revised Date : 2004.12.28MICROELECTRONICS CORP.Page No. : 1/5H2N5551NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe H2N5551 is designed for amplifier transistor.FeaturesTO-92 Complements to PNP Type H2N5401 High Collector-Emitter Breakdown Voltage (VCEO>160V (@IC=1mA))Absolute Maximum Ratings Maximum Temp

0.28. 2n5551.pdf Size:1058K _shenzhen

2N5551
2N5551

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors 2N5551 TRANSISTOR NPN TO-92 FEATURES Switching and amplification in high voltage Applications such as telephony 1. EMITTER Low current(max. 600mA) 2. BASE High voltage(max.180v) 3. COLLECTOR 1 2 3 MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Parame

0.29. 2n5551k.pdf Size:550K _jilin_sino

2N5551
2N5551

Typical Characterisitics 2N5551K hFE ICStatic Characteristic50 1000COMMON EMITTER300uATa=25! 270uA40Ta=100!240uA210uA30180uA100 Ta=25!150uA20120uA90uA106

0.30. 2n5551.pdf Size:260K _can-sheng

2N5551
2N5551

TO-92 Plastic-Encapsulate TransistorsTO-92TO-92TO-92TO-92TRANSISTOR (NPN)2N5551 TRANSISTOR (NPN)TRANSISTOR (NPN)TRANSISTOR (NPN)FEATURESFEATURESFEATURESFEATURES Switching and amplification in high voltage Switching and amplification in high voltage Switching and amplification in high voltage Switching and amplification in high voltage1. EMlTTER

0.31. 2n5551.pdf Size:136K _first_silicon

2N5551
2N5551

SEMICONDUCTOR2N5551TECHNICAL DATA2N5551 TRANSISTOR (NPN) B CFEATURES General Purpose Switching Application DIM MILLIMETERSA 4.70 MAXEB 4.80 MAXGC 3.70 MAXDMAXIMUM RATINGS (Ta=25 unless otherwise noted) D 0.55 MAXE 1.00F 1.27Symbol Parameter Value UnitG 0.85H 0.45VCBO Collector-Base Voltage 180 V _HJ 14.00 0.50+L 2.30F FVCEO Collector-E

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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