All Transistors. 2N5551 Datasheet

 

2N5551 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2N5551
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.31 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 135 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: TO92

 2N5551 Transistor Equivalent Substitute - Cross-Reference Search

   

2N5551 Datasheet (PDF)

 ..1. Size:188K  motorola
2n5550 2n5551.pdf pdf_icon

2N5551
2N5551

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N5550/DAmplifier Transistors2N5550NPN Silicon*2N5551*Motorola Preferred DeviceCOLLECTOR32BASE1EMITTER123MAXIMUM RATINGSRating Symbol 2N5550 2N5551 UnitCASE 2904, STYLE 1TO92 (TO226AA)CollectorEmitter Voltage VCEO 140 160 VdcCollectorBase Voltage VCBO 160 180 VdcEmitterB

 ..2. Size:53K  philips
2n5550 2n5551 2.pdf pdf_icon

2N5551
2N5551

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1862N5550; 2N5551NPN high-voltage transistorsProduct specification 2004 Oct 28Supersedes data of 1999 Apr 23Philips Semiconductors Product specificationNPN high-voltage transistors 2N5550; 2N5551FEATURES PINNING Low current (max. 300 mA)PIN DESCRIPTION High voltage (max. 160 V).1 collector2 baseAPPLICATIONS

 ..3. Size:49K  philips
2n5550 2n5551 3.pdf pdf_icon

2N5551
2N5551

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1862N5550; 2N5551NPN high-voltage transistors1999 Apr 23Product specificationSupersedes data of 1997 Apr 09Philips Semiconductors Product specificationNPN high-voltage transistors 2N5550; 2N5551FEATURES PINNING Low current (max. 300 mA)PIN DESCRIPTION High voltage (max. 160 V).1 collector2 baseAPPLICATION

 ..4. Size:216K  fairchild semi
2n5551.pdf pdf_icon

2N5551
2N5551

April 20062N5551- MMBT5551tmNPN General Purpose AmplifierFeatures This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Suffix -C means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base) Suffix -Y means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V)2N5551 MMBT555132TO-92SOT-2

Datasheet: 2N5538 , 2N5539 , 2N554 , 2N5540 , 2N5541 , 2N5542 , 2N555 , 2N5550 , BC549 , 2N5552 , 2N5552-1 , 2N5552-2 , 2N5552-4 , 2N5559 , 2N556 , 2N5560 , 2N557 .

 

 
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