ECH8501 Datasheet, Equivalent, Cross Reference Search
Type Designator: ECH8501
SMD Transistor Code: MA
Material of Transistor: Si
Polarity: NPN*PNP
Maximum Collector Power Dissipation (Pc): 1.6 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 260 MHz
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: ECH8
ECH8501 Transistor Equivalent Substitute - Cross-Reference Search
ECH8501 Datasheet (PDF)
ech8501.pdf
ECH8501Ordering number : ENA1581SANYO SemiconductorsDATA SHEETPNP/NPN Epitaxial Planar Silicon TransistorsECH8501Gate Drive ApplicationsFeatures Composite type, facilitating high-density mounting Mounting height 0.9mm Low collector-to-emitter saturation voltage NPN : VCE(sat)=0.075V(typ.)@IC=2.5A PNP : VCE(sat)= --0.1V(typ.)@IC= --2.5A Halogen free complianc
ech8501.pdf
Ordering number : ENA1581AECH8501Bipolar Transistorhttp://onsemi.com() () ( )30V, 30A, Low VCE sat Complementary Dual ECH8Features Composite type, facilitating high-density mounting Mounting height 0.9mm Low collector-to-emitter saturation voltage NPN : VCE(sat)=0.075V(typ.)@IC=2.5A PNP : VCE(sat)= --0.1V(typ.)@IC= --2.5A Halogen free compliance( ): PN
ech8502.pdf
ECH8502Ordering number : ENA1758SANYO SemiconductorsDATA SHEETPNP/NPN Epitaxial Planar Silicon TransistorsECH8502Gate Drive ApplicationsFeatures Composite type, facilitating high-density mounting Mounting height 0.9mm Low collector-to-emitter saturation voltage NPN : VCE(sat)=0.08V(typ.)@IC=2.5A PNP : VCE(sat)= --0.12V(typ.)@IC= --2.5A Halogen free complianc
ech8503.pdf
ECH8503Ordering number : ENA1680SANYO SemiconductorsDATA SHEETPNP Epitaxial Planar Silicon TransistorECH8503Motor Drive ApplicationsFeatures Composite type, facilitating high-density mounting Mounting height 0.9mm Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO
ech8502.pdf
Ordering number : ENA1758AECH8502Bipolar Transistorhttp://onsemi.com() () ( )50V, 30A, Low VCE sat Complementary Dual ECH8Features Composite type, facilitating high-density mounting Mounting height 0.9mm Low collector-to-emitter saturation voltage NPN : VCE(sat)=0.08V(typ.)@IC=2.5A PNP : VCE(sat)= --0.12V(typ.)@IC= --2.5A Halogen free compliance( ): PN
ech8503.pdf
Ordering number : ENA1680AECH8503Bipolar Transistorhttp://onsemi.com ( )50V, 5A, Low VCE sat PNP Dual ECH8Features Composite type, facilitating high-density mounting Mounting height 0.9mm Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO -50 VCollector-to-Emi
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2N963
