2N556 Specs and Replacement
Type Designator: 2N556
Material of Transistor: Ge
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Emitter-Base Voltage |Veb|: 15 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 85 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 35
Package: TO5
2N556 Substitution
- BJT ⓘ Cross-Reference Search
2N556 datasheet
2N5564/5565/5566 Vishay Siliconix Matched N-Channel JFET Pairs PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 - VGS2j Max (mV) 2N5564 -0.5 to -3 -40 7.5 -3 5 2N5565 -0.5 to -3 -40 7.5 -3 10 2N5566 -0.5 to -3 -40 7.5 -3 20 FEATURES BENEFITS APPLICATIONS D Two-Chip Design D Tight Differential Match vs. Current D Wideband Differential Amps D High... See More ⇒
Detailed specifications: 2N555, 2N5550, 2N5551, 2N5552, 2N5552-1, 2N5552-2, 2N5552-4, 2N5559, BC549, 2N5560, 2N557, 2N5575, 2N5576, 2N5577, 2N5578, 2N5579, 2N558
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