All Transistors. 2N5575 Datasheet

 

2N5575 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N5575

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 300 W

Maximum Collector-Base Voltage |Vcb|: 70 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 8 V

Maximum Collector Current |Ic max|: 80 A

Max. Operating Junction Temperature (Tj): 200 °C

Transition Frequency (ft): 0.4 MHz

Collector Capacitance (Cc): 2000 pF

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO3

2N5575 Transistor Equivalent Substitute - Cross-Reference Search

 

2N5575 Datasheet (PDF)

1.1. 2n5575.pdf Size:11K _semelab

2N5575

2N5575 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 70V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 80A 12.70 (0.50) All Semelab hermetically sealed products can be processed in acco

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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