2N5577 Datasheet and Replacement
Type Designator: 2N5577
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 300 W
Maximum Collector-Base Voltage |Vcb|: 70 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 80 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 0.4 MHz
Collector Capacitance (Cc): 2000 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO66
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2N5577 Datasheet (PDF)
2n5575.pdf

2N5575Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 70V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 80A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: GN4L3Z | 2SB1188SQ-R | 2SC2451 | 3DF5 | 2SA403 | DTA144WET1G | MA9002
Keywords - 2N5577 transistor datasheet
2N5577 cross reference
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History: GN4L3Z | 2SB1188SQ-R | 2SC2451 | 3DF5 | 2SA403 | DTA144WET1G | MA9002



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