MMBT8099L Datasheet, Equivalent, Cross Reference Search
Type Designator: MMBT8099L
SMD Transistor Code: KB
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Collector Current |Ic max|: 0.5 A
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT23
MMBT8099L Transistor Equivalent Substitute - Cross-Reference Search
MMBT8099L Datasheet (PDF)
mmbt8099lt1.pdf
MMBT8099LT1GAmplifier TransistorNPN SiliconFeatureshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantCOLLECTOR3MAXIMUM RATINGS1Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO 80 VdcCollector-Base Voltage VCBO 80 Vdc 2EMITTEREmitter-Base Voltage VEBO 6.0 VdcCollector Current - Continuous IC 500 mAdc3THERMAL
mmbt8099lt1g.pdf
MMBT8099LT1GAmplifier TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSwww.onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGS1Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO 80 Vdc2Collector-Base Voltage VCBO 80 VdcEMITTEREmitter-Base Voltage VEBO 6.0 VdcCollector Current - Continuous IC 500 mAdc3THERMAL C
mmbt8050cw mmbt8050dw.pdf
MMBT8050W (1.5A) NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 25 VEmitter Base Voltage VEBO 5 VPeak Collector Current ICM 1.5 A Total Power Dissipation Ptot 200 mWOJunction Temperature Tj 150 C OStorage Te
mmbt8050d.pdf
MMBT8050DoTRANSISTOR (NPN)FEATURES SOT-23 Complimentary to S8550 Collector Current: IC=0.5A 1BASE 2EMITTER 3COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector Dissipat
mmbt8050.pdf
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mmbt8050lt1.pdf
RoHS MMBT8050LT1NPN EPITAXIAL SILICON TRANSISTOR SOT-2332W OUTPUT AMPLIFIER OF PORTABLERADIOS IN CLASS1B PUSH-PULL OPERATION21. Complement to MMPT8550LT11.BASE Collector Current:Ic=500mA 2.EMITTERo2.4 Collector Dissipation:Pc=225mW(Tc=25 C) 3.COLLECTOR1.3Unit:mmoABSOLUTE MAXIMUM RATINGS (Ta=25 C)Symbol Rating UnitCharacteristicCollector-Base Volta
mmbt8050c mmbt8050d.pdf
MMBT8050C/D(1.5A)Features For switching and amplifier applications Especially suitable for AF-Driver stages and lowpower output stagesAbsolute maximum ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 25 VEmitter Base Voltage VEBO 6 VCollector Current IC 1.5 APower Dissipation PD 350 mW
mmbt8050-c mmbt8050-d.pdf
MMBT8050 NPN Transistor FeaturesSOT-23 (TO-236) For Switching and Amplifier Applications. As Complementary Type of the PNP TransistorMMBT8550 is Recommended.1.Base 2.Emitter 3.CollectorAbsolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value UnitCollector Base Voltage V 40 V CBOCollector Emitter Voltage V
mmbt8050c-1.5a mmbt8050d-1.5a.pdf
MMBT8050-1.5A NPN Transistor Features SOT-23 For Switching and AF Amplifer Applications.Equivalent Circuit 1.Base 2.Emitter 3.Collector3.CollectorMarking Code : MMBT8050C-1.5A : X1 MMBT8050D-1.5A : Y11.Base2. Emitter.Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified.Parameter Symbol Value UnitCollector Base Voltage V 40
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , C3198 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
