All Transistors. MMJT350T1 Datasheet

 

MMJT350T1 Datasheet and Replacement


   Type Designator: MMJT350T1
   SMD Transistor Code: T350
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 2.75 W
   Maximum Collector-Base Voltage |Vcb|: 300 V
   Maximum Collector-Emitter Voltage |Vce|: 300 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SOT223 TO261
 

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MMJT350T1 Datasheet (PDF)

 0.1. Size:137K  onsemi
 mmjt350t1g.pdf pdf_icon

MMJT350T1

MMJT350T1G,SMMJT350T1GBipolar Power TransistorsPNP SiliconBipolar power transistors are designed for use in line-operatedhttp://onsemi.comapplications such as low power, line-operated series pass andswitching regulators requiring PNP capability.0.5 AMPEREFeaturesPOWER TRANSISTOR High Collector-Emitter Sustaining Voltage -PNP SILICONVCEO(sus) = 300 Vdc @ IC 300 VOL

 7.1. Size:184K  onsemi
 mmjt350.pdf pdf_icon

MMJT350T1

MMJT350Bipolar Power TransistorsPNP SiliconBipolar power transistors are designed for use in line-operatedapplications such as low power, line-operated series pass andswitching regulators requiring PNP capability.www.onsemi.comFeatures0.5 AMPERE High Collector-Emitter Sustaining VoltagePOWER TRANSISTOR Excellent DC Current GainPNP SILICON Epoxy Meets UL 94 V-0

Datasheet: MMBTA56L , MMBTA56W , MMBTA63L , MMBTA64L , MMBTA70L , MMBTA92L , MMBTH10L , MMBTH10M3T5G , TIP31 , MMUN2111L , MMUN2112L , MMUN2113L , MMUN2114L , MMUN2115L , MMUN2116L , MMUN2132L , MMUN2133L .

History: 2SB1118 | 2SB1136S | BC487A | 2N1637 | MJD42CT4 | HA05 | MJD31T4

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