MMJT350T1 Datasheet and Replacement
Type Designator: MMJT350T1
SMD Transistor Code: T350
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 2.75 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: SOT223 TO261
MMJT350T1 Substitution
MMJT350T1 Datasheet (PDF)
mmjt350t1g.pdf

MMJT350T1G,SMMJT350T1GBipolar Power TransistorsPNP SiliconBipolar power transistors are designed for use in line-operatedhttp://onsemi.comapplications such as low power, line-operated series pass andswitching regulators requiring PNP capability.0.5 AMPEREFeaturesPOWER TRANSISTOR High Collector-Emitter Sustaining Voltage -PNP SILICONVCEO(sus) = 300 Vdc @ IC 300 VOL
mmjt350.pdf

MMJT350Bipolar Power TransistorsPNP SiliconBipolar power transistors are designed for use in line-operatedapplications such as low power, line-operated series pass andswitching regulators requiring PNP capability.www.onsemi.comFeatures0.5 AMPERE High Collector-Emitter Sustaining VoltagePOWER TRANSISTOR Excellent DC Current GainPNP SILICON Epoxy Meets UL 94 V-0
Datasheet: MMBTA56L , MMBTA56W , MMBTA63L , MMBTA64L , MMBTA70L , MMBTA92L , MMBTH10L , MMBTH10M3T5G , TIP31 , MMUN2111L , MMUN2112L , MMUN2113L , MMUN2114L , MMUN2115L , MMUN2116L , MMUN2132L , MMUN2133L .
History: 2SB1118 | 2SB1136S | BC487A | 2N1637 | MJD42CT4 | HA05 | MJD31T4
Keywords - MMJT350T1 transistor datasheet
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History: 2SB1118 | 2SB1136S | BC487A | 2N1637 | MJD42CT4 | HA05 | MJD31T4



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