MMJT350T1 Specs and Replacement

Type Designator: MMJT350T1

SMD Transistor Code: T350

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 2.75 W

Maximum Collector-Base Voltage |Vcb|: 300 V

Maximum Collector-Emitter Voltage |Vce|: 300 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: SOT223 TO261

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MMJT350T1 datasheet

 0.1. Size:137K  onsemi

 mmjt350t1g.pdf pdf_icon

MMJT350T1

MMJT350T1G, SMMJT350T1G Bipolar Power Transistors PNP Silicon Bipolar power transistors are designed for use in line-operated http //onsemi.com applications such as low power, line-operated series pass and switching regulators requiring PNP capability. 0.5 AMPERE Features POWER TRANSISTOR High Collector-Emitter Sustaining Voltage - PNP SILICON VCEO(sus) = 300 Vdc @ IC 300 VOL... See More ⇒

 7.1. Size:184K  onsemi

 mmjt350.pdf pdf_icon

MMJT350T1

MMJT350 Bipolar Power Transistors PNP Silicon Bipolar power transistors are designed for use in line-operated applications such as low power, line-operated series pass and switching regulators requiring PNP capability. www.onsemi.com Features 0.5 AMPERE High Collector-Emitter Sustaining Voltage POWER TRANSISTOR Excellent DC Current Gain PNP SILICON Epoxy Meets UL 94 V-0... See More ⇒

Detailed specifications: MMBTA56L, MMBTA56W, MMBTA63L, MMBTA64L, MMBTA70L, MMBTA92L, MMBTH10L, MMBTH10M3T5G, 8050, MMUN2111L, MMUN2112L, MMUN2113L, MMUN2114L, MMUN2115L, MMUN2116L, MMUN2132L, MMUN2133L

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