All Transistors. MMUN2113L Datasheet

 

MMUN2113L Datasheet, Equivalent, Cross Reference Search


   Type Designator: MMUN2113L
   SMD Transistor Code: A6C
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 47 kOhm
   Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SOT23

 MMUN2113L Transistor Equivalent Substitute - Cross-Reference Search

   

MMUN2113L Datasheet (PDF)

 0.1. Size:119K  onsemi
nsvmmun2113lt3g.pdf

MMUN2113L
MMUN2113L

MUN2113, MMUN2113L,MUN5113, DTA144EE,DTA144EM3, NSBA144EF3Digital Transistors (BRT)R1 = 47 kW, R2 = 47 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (BRT

 0.2. Size:215K  onsemi
mmun2111lt1g mmun2111lt3g mmun2112lt1g mmun2113lt1g mmun2113lt3g mmun2114lt1g mmun2114lt3g mmun2115lt1g.pdf

MMUN2113L
MMUN2113L

MMUN2111LT1G,SMMUN2111LT1G,NSVMMUN2111LT1G SeriesBias Resistor TransistorsPNP Silicon Surface Mount Transistorshttp://onsemi.comwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkSO

 7.1. Size:188K  motorola
mmun2111lt1rev0d.pdf

MMUN2113L
MMUN2113L

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMUN2111LT1/DBias Resistor TransistorMMUN2111LT1PNP Silicon Surface Mount Transistor withSERIESMonolithic Bias Resistor NetworkMotorola Preferred DevicesThis new series of digital transistors is designed to replace a single device and itsexternal resistor bias network. The BRT (Bias Resistor Transistor) contains a s

 7.2. Size:267K  motorola
mmun2111.pdf

MMUN2113L
MMUN2113L

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMUN2111LT1/DBias Resistor TransistorMMUN2111LT1PNP Silicon Surface Mount Transistor withSERIESMonolithic Bias Resistor NetworkMotorola Preferred DevicesThis new series of digital transistors is designed to replace a single device and itsexternal resistor bias network. The BRT (Bias Resistor Transistor) contains a s

 7.3. Size:111K  onsemi
nsvmmun2112lt1g.pdf

MMUN2113L
MMUN2113L

MUN2112, MMUN2112L,MUN5112, DTA124EE,DTA124EM3, NSBA124EF3Digital Transistors (BRT)R1 = 22 kW, R2 = 22 kWhttp://onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (

 7.4. Size:190K  onsemi
mmun2111lt1.pdf

MMUN2113L
MMUN2113L

MMUN2111LT1G SeriesBias Resistor TransistorsPNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singlehttp://onsemi.comdevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkconsisting of two resistors; a serie

 7.5. Size:199K  wietron
mmun2111.pdf

MMUN2113L
MMUN2113L

MMUN2111 SeriesBias Resistor TransistorCOLLECTOR33PNP Silicon R 11BASER 2122EMITTERSOT-23( T =25 C unless otherwise noted)Maximum Ratings ARating Symbol Value UnitCollector-Emitter Voltage V 50CEO VdcVdcCollector-Base Voltage VCBO 50Collector Current-Continuous IC mAdc100Thermal CharacteristicsMax UnitCharacteristics SymbolTotal Device Dissipa

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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