NJT4031NT1G Datasheet and Replacement
Type Designator: NJT4031NT1G
SMD Transistor Code: 4031N
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 215 MHz
Collector Capacitance (Cc): 25 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: SOT223 TO261
NJT4031NT1G Transistor Equivalent Substitute - Cross-Reference Search
NJT4031NT1G Datasheet (PDF)
njt4031n njv4031nt1g njv4031nt3g.pdf
NJT4031N, NJV4031NT1G, NJV4031NT3G Bipolar Power Transistors NPN Silicon http //onsemi.com Features Epoxy Meets UL 94, V-0 @ 0.125 in NPN TRANSISTOR NJV Prefix for Automotive and Other Applications Requiring 3.0 AMPERES Unique Site and Control Change Requirements; AEC-Q101 40 VOLTS, 2.0 WATTS Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free a... See More ⇒
njt4031n.pdf
NJT4031N, NJV4031NT1G, NJV4031NT3G Bipolar Power Transistors NPN Silicon http //onsemi.com Features Epoxy Meets UL 94, V-0 @ 0.125 in NPN TRANSISTOR NJV Prefix for Automotive and Other Applications Requiring 3.0 AMPERES Unique Site and Control Change Requirements; AEC-Q101 40 VOLTS, 2.0 WATTS Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free a... See More ⇒
njt4030p njv4030p.pdf
Bipolar Power Transistors PNP Silicon NJT4030P, NJV4030P Features Epoxy Meets UL 94, V-0 @ 0.125 in NJV Prefix for Automotive and Other Applications Requiring www.onsemi.com Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable PNP TRANSISTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 3.0 AMPERES Compliant 40 VOLTS, 2.0 WATT... See More ⇒
njt4030p-t.pdf
NJT4030P, NJV4030PT1G, NJV4030PT3G Bipolar Power Transistors PNP Silicon http //onsemi.com Features PNP TRANSISTOR Collector -Emitter Sustaining Voltage - 3.0 AMPERES VCEO(sus) = 40 Vdc (Min) @ IC = 10 mAdc 40 VOLTS, 2.0 WATTS High DC Current Gain - hFE = 200 (Min) @ IC = 1.0 Adc = 100 (Min) @ IC = 3.0 Adc Low Collector -Emitter Saturation Voltage - VCE(sat) = 0.2... See More ⇒
Datasheet: NJD35N04 , NJL0281D , NJL0302D , NJL1302D , NJL3281D , NJL4281D , NJL4302D , NJT4030P , SS8050 , NJW0302 , NJW1302 , NJW21194 , NJX1675P , NS2029M3 , NSB1706DMW5 , NSB4904DW1 , NSB9435 .
History: NJVNJD1718T4G | AU213 | 2SD1682R
Keywords - NJT4031NT1G transistor datasheet
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History: NJVNJD1718T4G | AU213 | 2SD1682R
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