NSS20200L Specs and Replacement

Type Designator: NSS20200L

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.71 W

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Collector Current |Ic max|: 4 A

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Forward Current Transfer Ratio (hFE), MIN: 250

Noise Figure, dB: -

Package: SOT23

 NSS20200L Substitution

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NSS20200L datasheet

 0.1. Size:126K  onsemi

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NSS20200L

NSS20200LT1G 20 V, 4.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications http //onsemi.com where affordable efficient energy control is importa... See More ⇒

 0.2. Size:126K  onsemi

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NSS20200L

NSS20200LT1G, NSV20200LT1G 20 V, 4.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) http //onsemi.com transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These -20 VOLTS are designed for use in low voltage, high speed switching applications 4.0 AMPS where affordable... See More ⇒

 0.3. Size:190K  onsemi

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NSS20200L

NSS20200LT1G, NSV20200LT1G 20 V, 4.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) www.onsemi.com transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These -20 VOLTS are designed for use in low voltage, high speed switching applications 4.0 AMPS where affordable ef... See More ⇒

Detailed specifications: NSS12500UW3, NSS12501UW3, NSS12601CF8, NSS1C200, NSS1C200L, NSS1C201LT1G, NSS1C201MZ4T1G, NSS20101JT1G, BC547B, NSS20201L, NSS20201MR6T1G, NSS20300MR6T1G, NSS20500UW3, NSS20501UW3, NSS20601CF8, NSS30070MR6T1G, NSS30071MR6T1G

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