NSS20200L Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NSS20200L  📄📄 

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.71 W

Tensión colector-emisor (Vce): 20 V

Corriente del colector DC máxima (Ic): 4 A

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Ganancia de corriente contínua (hFE): 250

Encapsulados: SOT23

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NSS20200L datasheet

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NSS20200L

NSS20200LT1G 20 V, 4.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications http //onsemi.com where affordable efficient energy control is importa

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NSS20200L

NSS20200LT1G, NSV20200LT1G 20 V, 4.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) http //onsemi.com transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These -20 VOLTS are designed for use in low voltage, high speed switching applications 4.0 AMPS where affordable

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NSS20200L

NSS20200LT1G, NSV20200LT1G 20 V, 4.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) www.onsemi.com transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These -20 VOLTS are designed for use in low voltage, high speed switching applications 4.0 AMPS where affordable ef

MOSTRAR MÁS

Otros transistores... NSS12500UW3, NSS12501UW3, NSS12601CF8, NSS1C200, NSS1C200L, NSS1C201LT1G, NSS1C201MZ4T1G, NSS20101JT1G, BC547B, NSS20201L, NSS20201MR6T1G, NSS20300MR6T1G, NSS20500UW3, NSS20501UW3, NSS20601CF8, NSS30070MR6T1G, NSS30071MR6T1G