NST856BF3T5G Datasheet, Equivalent, Cross Reference Search
Type Designator: NST856BF3T5G
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.347 W
Maximum Collector-Emitter Voltage |Vce|: 65 V
Maximum Collector Current |Ic max|: 0.1 A
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 220
Noise Figure, dB: -
Package: SOT-1123
NST856BF3T5G Transistor Equivalent Substitute - Cross-Reference Search
NST856BF3T5G Datasheet (PDF)
nst856bf3t5g.pdf
NST856BF3T5GPNP General PurposeTransistorThe NST856BF3T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It isdesigned for general purpose amplifier applications and is housed inhttp://onsemi.comthe SOT-1123 surface mount package. This device is ideal forlow-power surface mount applications where board space is at apremium. COLLECTOR3
nst856bf3-d.pdf
NST856BF3T5GPNP General PurposeTransistorThe NST856BF3T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It isdesigned for general purpose amplifier applications and is housed inhttp://onsemi.comthe SOT-1123 surface mount package. This device is ideal forlow-power surface mount applications where board space is at apremium. COLLECTOR3
nst857bdp6t5g.pdf
NST857BDP6T5GDual General PurposeTransistorThe NST857BDP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inwww.onsemi.comone package, this device is ideal for low-power surface mountapplication
nst857bf3.pdf
NST857BF3T5GPNP General PurposeTransistorThe NST857BF3T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It isdesigned for general purpose amplifier applications and is housed inhttp://onsemi.comthe SOT-1123 surface mount package. This device is ideal forlow-power surface mount applications where board space is at apremium. COLLECTOR3
nst857bdp6.pdf
NST857BDP6T5GDual General PurposeTransistorThe NST857BDP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inone package, this device is ideal for low-power surface mounthttp://onsemi.comapplicat
nst857amx2 nst857bmx2.pdf
DATA SHEETwww.onsemi.comCOLLECTORGeneral Purpose3Transistors1BASEPNP Silicon2NST857AMX2,EMITTERNST857BMX23Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1Compliant 2X2DFN3 (1.0 x 0.6 mm)CASE 714ACMAXIMUM RATINGS (TA = 25C unless otherwise noted)Rating Symbol Value UnitCollector-Emitter Voltage VCEO -45 VMARKING DIAGRAMC
nst857bf3t5g.pdf
NST857BF3T5GPNP General PurposeTransistorThe NST857BF3T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It isdesigned for general purpose amplifier applications and is housed inhttp://onsemi.comthe SOT-1123 surface mount package. This device is ideal forlow-power surface mount applications where board space is at apremium. COLLECTOR3
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