2N56 Datasheet and Replacement

Order this documentMOTOROLAby 2N5684/DSEMICONDUCTOR TECHNICAL DATAPNP2N5684High-Current ComplementaryNPNSilicon Power Transistors2N5685. . . designed for use in highpower amplifier and switching circuit applications. High Current Capability IC Continuous = 50 Amperes.*2N5686 DC Current Gain hFE = 1560 @ IC = 25 Adc Low CollectorEmitter Sa

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N5640/DJFETs SwitchingNChannel Depletion2N56401 DRAIN31GATE 232 SOURCECASE 2904, STYLE 5TO92 (TO226AA)Rating Symbol Value UnitDrainSource Voltage VDS 30 VdcDrainGate Voltage VDG 30 VdcReverse GateSource Voltage VGSR 30 VdcForward Gate Current IGF 10 mAdcTotal Device Dissip

Order this documentMOTOROLAby 2N5655/DSEMICONDUCTOR TECHNICAL DATA2N56552N5656Plastic NPN Silicon2N5657High-Voltage Power Transistor. . . designed for use in lineoperated equipment such as audio output amplifiers;lowcurrent, highvoltage converters; and AC line relays. 0.5 AMPEREPOWER TRANSISTORS Excellent DC Current Gain hFE = 30250 @ IC = 100 mAdcNP

Order this documentMOTOROLAby 2N5630/DSEMICONDUCTOR TECHNICAL DATANPN2N5630High-Voltage High Power2N5631TransistorsPNP. . . designed for use in high power audio amplifier applications and high voltage2N6030switching regulator circuits. High Collector Emitter Sustaining Voltage 2N6031VCEO(sus) = 120 Vdc 2N5630, 2N6030VCEO(sus) = 140 Vdc 2N5631, 2N603

2N5657SILICON NPN TRANSISTOR STMicroelectronics PREFERREDSALESTYPE NPN TRANSISTOR DESCRIPTION The 2N5657 is a silicon epitaxial-base NPNtransistor in Jedec SOT-32 plastic package. It isintended for use output amplifiers, low current,high voltage converters and AC line relays.123SOT-32INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Un

2N5639N-Channel Switch This device is designed for low level analog switchng, sample and hold circuits and chopper stabilized amplifiers. Sourced from process 51.TO-9211. Drain 2. Source 3. GateAbsolute Maximum Ratings * TC=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 30 VVGS Gate-Source Voltage -30 VIGF Forward Gate Current 50 mA

2N5638N-Channel Switch This device is designed for low level analog switchng, sample and hold circuits and chopper stabilized amplifiers. Sourced from process 51.TO-9211. Drain 2. Source 3. GateAbsolute Maximum Ratings * TC=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 30 VVGS Gate-Source Voltage -30 VIGF Forward Gate Current 50 mA

DATA SHEET2N5679 2N5680 PNP 2N5681 2N5682 NPN COMPLEMENTARY SILICON HIGH POWER TRANSISTORS JEDEC TO-39 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5679 Series types are complementary silicon high power transistors manufactured by the epitaxial planar process and designed for general-purpose amplifier and switching applications where high voltages are required. MAXIMUM RATIN

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2N5655G, 2N5657GPlastic NPN SiliconHigh-Voltage PowerTransistorsThese devices are designed for use in line-operated equipment suchas audio output amplifiers; low-current, high-voltage converters; andhttp://onsemi.comAC line relays.0.5 AMPEREFeaturesPOWER TRANSISTORS Excellent DC Current GainNPN SILICON High Current-Gain - Bandwidth Product250-350 VOLTS, 20 WATT

2N5684 (PNP), 2N5686 (NPN)High-CurrentComplementary SiliconPower TransistorsThese packages are designed for use in high-power amplifier andswitching circuit applications.http://onsemi.comFeatures50 AMPERE High Current Capability - IC Continuous = 50 AmperesCOMPLEMENTARY SILICON DC Current Gain - hFE = 15 - 60 @ IC = 25 AdcPOWER TRANSISTORS Low Collector-Emitte

2N5638, 2N56392N5638 is a Preferred DeviceJFET Chopper TransistorsN-Channel - DepletionN-Channel Junction Field Effect Transistors, depletion mode(Type A) designed for chopper and high-speed switching applications.Featureshttp://onsemi.com Low Drain-Source ON Resistance: RDS(on) = 30W for 2N5638RDS(on) = 60W for 2N56391 DRAIN Low Reverse Transfer Capacitance -

2N5655, 2N5657Plastic NPN SiliconHigh-Voltage PowerTransistorThese devices are designed for use in line-operated equipment suchas audio output amplifiers; low-current, high-voltage converters; andhttp://onsemi.comAC line relays.0.5 AMPEREFeaturesPOWER TRANSISTORS Excellent DC Current Gain -NPN SILICONhFE = 30-250 @ IC = 100 mAdc250-350 VOLTS, 20 WATTS Current

2N5655, 2N5657Plastic NPN SiliconHigh-Voltage PowerTransistorThese devices are designed for use in line-operated equipment suchas audio output amplifiers; low-current, high-voltage converters; andhttp://onsemi.comAC line relays.0.5 AMPEREFeaturesPOWER TRANSISTORS Excellent DC Current Gain -NPN SILICONhFE = 30-250 @ IC = 100 mAdc250-350 VOLTS, 20 WATTS Current

2N5655G, 2N5657GPlastic NPN SiliconHigh-Voltage PowerTransistorsThese devices are designed for use in line-operated equipment suchas audio output amplifiers; low-current, high-voltage converters; andhttp://onsemi.comAC line relays.0.5 AMPEREFeaturesPOWER TRANSISTORS Excellent DC Current GainNPN SILICON High Current-Gain - Bandwidth Product250-350 VOLTS, 20 WATT

2N5631High-Voltage - High PowerTransistorsHigh-voltage - high power transistors designed for use in highpower audio amplifier applications and high voltage switchingregulator circuits.http://onsemi.com High Collector Emitter Sustaining Voltage -VCEO(sus) = 140 Vdc16 AMPERE High DC Current Gain - @ IC = 8.0 AdchFE = 15 (Min)POWER TRANSISTORS Low Collector-Emitt

2N5684 (PNP), 2N5686 (NPN)High-CurrentComplementary SiliconPower TransistorsThese packages are designed for use in high-power amplifier andswitching circuit applications.http://onsemi.comFeatures50 AMPERE High Current Capability - IC Continuous = 50 AmperesCOMPLEMENTARY SILICON DC Current Gain - hFE = 15 - 60 @ IC = 25 AdcPOWER TRANSISTORS Low Collector-Emitte

2N5684 (PNP), 2N5686 (NPN)High-CurrentComplementary SiliconPower TransistorsThese packages are designed for use in high-power amplifier andswitching circuit applications.http://onsemi.comFeatures50 AMPERE High Current Capability - IC Continuous = 50 AmperesCOMPLEMENTARY SILICON DC Current Gain - hFE = 15 - 60 @ IC = 25 AdcPOWER TRANSISTORS Low Collector-Emitte

NPN 2N5671 2N5672HIGH CURRENT FAST SWITCHING APPLICATIONSHIGH CURRENT FAST SWITCHING APPLICATIONSThe 2N5671 and 2N5672 are silicon multiepitaxial planer NPN transistors in Jedec TO-3.They are especially intended for high current, fast switching industrial applications.ABSOLUTE MAXIMUM RATINGSSymbol Ratings Value Unit2N5671 90VCEO Collector-Emitter Voltage V2N5672 1202N56

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Power Transistors INCHANGE 2N5609Silicon PNP Transistors FeaturesWith TO-66 packageDesigned for use as high-frequency drivers in audio amplifier Absolute Maximum Ratings Tc=25SYMBOL PARAMETER RATING UNITVCBOCollector to base voltage 80 VVCEOCollector to emitter voltage 80 VVEBOEmitter to base voltage 5.0 VICPPeak collector current AICCollector current 5.0 APC

2N5632Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 100V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

2N5620Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 100V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a

NPN POWER SILICON SWITCHING TRANSISTOR 2N5665N1 Hermetic SMD0.5 Ceramic Surface Mount. Ideally Suited for Power Amplifier and Switching Applications. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VCBO Collector Base Voltage 400V VCEO Collector Emitter Voltage 300V VEBO Emitter Base Voltage 6V IC Cont

2N5675Dimensions in mm (inches). Bipolar PNP Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar PNP Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 100V dia.IC = 2A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3

NPN POWER SILICON SWITCHING TRANSISTOR 2N5667N1 Hermetic SMD0.5 Ceramic Surface Mount. Ideally Suited for Power Amplifier and Switching Applications. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VCBO Collector Base Voltage 400V VCEO Collector Emitter Voltage 300V VEBO Emitter Base Voltage 6V IC Cont

2N5601Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar PNP Device. 1 2VCEO = 80V IC = 2A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specif

2N5608Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar NPN Device. 1 2VCEO = 80V IC = 5A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specif

2N5603Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar PNP Device. 1 2VCEO = 100V IC = 2A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci

2N5606Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar NPN Device. 1 2VCEO = 60V IC = 5A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specif

2N5623Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar PNP Device. 3VCEO = 80V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a

2N5613Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar PNP Device. 3VCEO = 60V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ac

2N5619Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar PNP Device. 3VCEO = 80V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ac

2N5665SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 300V IC = 3A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (

2N5605Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar PNP Device. 1 2VCEO = 60V IC = 5A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specif

2N5633Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 80V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a

2N5664SMD05Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296)0.76 (0.030) Ceramic Surface Mount min.3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005)Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 200V IC = 3A 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020)All Semelab her

2N5617Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar PNP Device. 3VCEO = 80V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ac

2N5681SMD05Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296)0.76 (0.030) Ceramic Surface Mount min.3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005)Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 100V IC = 1A 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020)All Semelab her

2N5600Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar PNP Device. 1 2VCEO = 80V IC = 2A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specif

2N5666SMD05Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296)0.76 (0.030) Ceramic Surface Mount min.3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005)Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 200V IC = 3A 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020)All Semelab her

2N5622Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 60V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a

2N5634Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 140V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

2N5666SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 200V IC = 3A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (

2N5611Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar PNP Device. 1 2VCEO = 100V IC = 5A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci

2N5664SMDSEMELABMECHANICAL DATADimensions in mm (inches)NPN BIPOLAR TRANSISTOR IN A CERAMIC SURFACE MOUNTPACKAGE FORHIGH REL APPLICATIONS FEATURES ! HIGH VOLTAGE FAST SWITCHING CERAMIC SURFACE MOUNT PACKAGE SCREENING OPTIONS AVAILABLE

2N5643 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L STUD The ASI 2N5643 is Designed for .112x45 A wideband large-signal amplifier stages in the 125 175 MHz range. C BE E FEATURES:C B Minimum Gain = 7.6 dB Output Power = 40 W IDH Omnigold Metalization System JG#8-32 UNC-2AFMAXIMUM RATINGS E IC 5.0

IS/ISO 9002 IS / IECQC 700000Lic# QSC/L- 000019.2 IS / IECQC 750100Continental Device India LimitedAn IS/ISO 9002 and IECQ Certified ManufacturerPNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 2N5679 2N5681 2N5680 2N5682 PNP NPNTO-39 TO-39Boca Semiconductor Corp. BSCThese Are High Voltage & High Current, General Purpose TransistorsABSOLUTE MAXIMUM RATINGS.DESCRIPTION SYMBOL 2N5

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 2N5679 2N5681 2N5680 2N5682 PNP NPNTO-39 TO-39These Are High Voltage & High Current, General Purpose TransistorsABSOLUTE MAXIMUM RATINGS.DESCRIPTION SYMBOL 2N5679 2N5680 UNITS2N5681 2N5682Collector -Emitter Voltage VCEO 100 120 VCollector -Base

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5622 2N5624 2N5626 2N5628 DESCRIPTION With TO-3 package Excellent safe operating area Low collector-emitter saturation voltage APPLICATIONS For audio and general-purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Abso

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5629 2N5630 DESCRIPTION With TO-3 package Complement to type 2N6029 2N6030 APPLICATIONS For high voltage and high power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbolAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIO

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5606 2N5608 2N5610 2N5612 DESCRIPTION With TO-66 package Excellent safe operating area Low collector-emitter saturation voltage APPLICATIONS For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-66)

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5631 DESCRIPTION With TO-3 package Complement to type 2N6031 High collector-emitter sustaining voltage High DC current gain Low collector-emitter saturation voltage APPLICATIONS For high power audio amplifier and high voltage switching regulator circuits applications PINNING PIN DESCRIPTION

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5621 2N5623 2N5625 2N5627 DESCRIPTION With TO-3 package Excellent safe operating area Low collector-emitter saturation voltage APPLICATIONS For audio and general-purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Abso

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5598 2N5600 2N5602 2N5604 DESCRIPTION With TO-66 package Excellent safe operating area Low collector-emitter saturation voltage APPLICATIONS For high frequency power amplifier ; audio power amplifier and drivers. PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified ou

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5605 2N5607 2N5609 2N5611 DESCRIPTION With TO-66 package Excellent safe operating area Low collector-emitter saturation voltage APPLICATIONS For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-66)

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5597 2N5599 2N5601 2N5603 DESCRIPTION With TO-66 package Excellent safe operating area Low collector-emitter saturation voltage APPLICATIONS For high frequency power amplifier ; audio power amplifier and drivers. PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified ou

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5655 2N5656 2N5657 DESCRIPTION With TO-126 package High breakdown voltage APPLICATIONS For use in line-operated equipment such as audio output amplifiers; low-current ,high-voltage converters; and AC line relays PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 Bas

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5632 2N5633 2N5634 DESCRIPTION With TO-3 package Low collector-emitter saturation voltage APPLICATIONS For general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbolAbsolute maximum ratings(Ta=) SY

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/455 DEVICES LEVELS 2N5664 2N5666 2N5667 JAN2N5665 2N5666S 2N5667S JANTX2N5666U3 JANTVJANS ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) 2N5664 2N5

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/455 DEVICES LEVELS 2N5664 2N5666 2N5667 JAN2N5665 2N5666S 2N5667S JANTX2N5666U3 JANTVJANS ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) 2N5664 2N5

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http: //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/454 DEVICES LEVELS 2N5660 2N5661 2N5662 JAN2N5660U3 2N5661U3 2N5663 JANTXJANT

TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/454 Devices Qualified Level JAN, JANTX 2N5660 2N5661 2N5662 2N5663 JANTXV MAXIMUM RATINGS 2N5660 2N5661 Ratings Symbol Unit 2N5662 2N5663 Collector-Emitter Voltage 200 300 Vdc VCEO Collector-Base Voltage 250 400 Vdc VCBO Collector-Emitter Voltage 250 400 Vdc VCER Emitter-Base Voltage 6.0

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/455 DEVICES LEVELS 2N5664 2N5666 2N5667 JAN2N5665 2N5666S 2N5667S JANTX2N5666U3 JANTVJANS ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) 2N5664 2N5

TECHNICAL DATA NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/455 Devices Qualified Level Devices Qualified Level JAN JAN 2N5666 2N5667 JANTX 2N5664 2N5665 JANTX 2N5666S 2N5667S JANTXV JANTXV JANS MAXIMUM RATINGS 2N5664 2N5665 Ratings Symbol 2N5666, S 2N5667, S Unit Collector-Emitter Voltage 200 300 Vdc VCEO TO-66* (TO-213AA) Collector-Ba

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http: //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/454 DEVICES LEVELS 2N5660 2N5661 2N5662 JAN2N5660U3 2N5661U3 2N5663 JANTXJANT

PNP Power Silicon Transistor2N5679 & 2N5680Features Available in JAN, JANTX and JANTXVper MIL-PRF-19500/582 TO-39 (TO-205AD) PackageMaximum Ratings (TA = 25C unless otherwise noted)Ratings Symbol 2N5679 2N5680 UnitsCollector - Emitter Voltage VCEO 100 120 VdcCollector - Base Voltage VCBO 100 120 VdcEmitter - Base Voltage VEBO 4.0 4.0 VdcCollector Current IC 1.0 1.0

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistors 2N5672DESCRIPTIONDC Current Gain-: h = 20~100@I = 15AFE CLow Collector Saturation Voltage-: V )= 0.75V(Max)@ I = 15ACE(sat CWide Area of Safe OperationAPPLICATIONSDesigned for general purpose power amplifier and switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2N5631DESCRIPTIONExcellent Safe Operating AreaHigh DC Current Gain-h = 15(Min)@I = 8AFE CLow Saturation Voltage-: V )= 1.0V(Max)@ I = 10ACE(sat CComplement to Type 2N6031APPLICATIONSDesigned for use in high power audio amplifier applicationsand high voltage switching regulator circuits.ABSOLUTE M

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5622 2N5624 2N5626 2N5628 DESCRIPTION With TO-3 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For audio and general-purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbso

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5629 2N5630 DESCRIPTION With TO-3 package Complement to type 2N6029 2N6030 APPLICATIONS For high voltage and high power amplifier applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETE

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5606 2N5608 2N5610 2N5612 DESCRIPTION With TO-66 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5613 2N5615 2N5617 2N5619 DESCRIPTION With TO-3 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5664 2N5665 DESCRIPTION With TO-66 package High breakdown voltage APPLICATIONS High speed switching and linear amplifier High-voltage operational amplifiers Switching regulators ,converters Deflection stages and high fidelity amplifers PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 Em

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5631 DESCRIPTION With TO-3 package Complement to type 2N6031 High collector-emitter sustaining voltage High DC current gain@IC=8A Low collector saturation voltage APPLICATIONS For high power audio amplifier and high voltage switching regulator circuits applications PINNING PIN DESC

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N5657 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 350V(Min) DC Current Gain- : hFE= 30-250@IC= 0.1A Low Saturation Voltage APPLICATIONS Designed for use in line-operated equipment such as audio output amplifiers; low-current, high-voltage converters; and AC

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5621 2N5623 2N5625 2N5627 DESCRIPTION With TO-3 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For audio and general-purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbs

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5671 2N5672 DESCRIPTION With TO-3 package High current ,high speed APPLICATIONS Intended for high current and fast switching industrial applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PA

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N5610 DESCRIPTION DC Current Gain- : hFE= 70-200@IC= 2.5A Wide Area of Safe Operation Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) Complement to Type 2N5609 APPLICATIONS Designed for use in high frequency power amplifiers, audio power amplifier and drivers. ABSO

isc Silicon NPN Power Transistor 2N5665DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =300V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage 400 VCBOV Collector-Emitter Voltage 30

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5612A DESCRIPTION With TO-66 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol 3 CollectorAbsol

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5598 2N5600 2N5602 2N5604 DESCRIPTION With TO-66 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For high frequency power amplifier ; audio power amplifier and drivers. PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5605 2N5607 2N5609 2N5611 DESCRIPTION With TO-66 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N5619 DESCRIPTION DC Current Gain- : hFE= 30-90@IC= -2.5A Wide Area of Safe Operation Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min) Complement to Type 2N5620 APPLICATIONS Designed for use in high frequency power amplifiers, audio power amplifier and drivers. AB

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5597 2N5599 2N5601 2N5603 DESCRIPTION With TO-66 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For high frequency power amplifier ; audio power amplifier and drivers. PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5611A DESCRIPTION With TO-66 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol3 CollectorAbsolu

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5660 2N5661 DESCRIPTION With TO-66 package High breakdown voltage APPLICATIONS High speed switching and linear amplifier High-voltage operational amplifiers Switching regulators ,converters Deflection stages and high fidelity amplifers PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 Em

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5614 2N5616 2N5618 2N5620 DESCRIPTION With TO-3 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5655 2N5656 2N5657 DESCRIPTION With TO-126 package High breakdown voltage APPLICATIONS For use in line-operated equipment such as audio output amplifiers; low-current ,high-voltage converters; and AC line relays PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting bas

isc Silicon NPN Power Transistor 2N5661DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =300V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage 400 VCBOV Collector-Emitter Voltage 30

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5632 2N5633 2N5634 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain APPLICATIONS For general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute m

isc Silicon NPN Power Transistors 2N5656DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 300V(Min)CEO(SUS)Low Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for use in line-operated equipment such as audiooutput amplifiers; low-current, high-voltage converters; and

isc Silicon NPN Power Transistors 2N5655DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 250V(Min)CEO(SUS)DC Current Gain-: h = 30-250@I = 0.1AFE CLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in line-operated equipment such as audiooutput amplifiers; low-current, high-

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N5611 DESCRIPTION DC Current Gain- : hFE= 30-90@IC= -2.5A Wide Area of Safe Operation Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min) Complement to Type 2N5612 APPLICATIONSDesigned for use in high frequency power amplifiers, audio power amplifier and drivers. ABS

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5676 DESCRIPTION With TO-66 package High transition frequency APPLICATIONS For use as high-frequency drivers in audio amplifiers PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS V