BFG25AW Datasheet. Specs and Replacement

Type Designator: BFG25AW  📄📄 

SMD Transistor Code: N6

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 8 V

Maximum Collector-Emitter Voltage |Vce|: 5 V

Maximum Emitter-Base Voltage |Veb|: 2 V

Maximum Collector Current |Ic max|: 0.0065 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 5000 MHz

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: SOT343N

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BFG25AW datasheet

 ..1. Size:346K  philips

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BFG25AW

DATA SHEET dbook, halfpage M3D123 BFG25AW; BFG25AW/X NPN 5 GHz wideband transistors Product specification 1998 Sep 23 Supersedes data of August 1995 NXP Semiconductors Product specification BFG25AW; NPN 5 GHz wideband transistors BFG25AW/X FEATURES PINNING Low current consumption PIN DESCRIPTION lfpage 4 3 (100 Ato1mA) BFG25AW Low noise figure 1 collector G... See More ⇒

 ..2. Size:117K  philips

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BFG25AW

DATA SHEET book, halfpage M3D123 BFG25AW; BFG25AW/X NPN 5 GHz wideband transistors 1998 Sep 23 Product specification Supersedes data of August 1995 Philips Semiconductors Product specification NPN 5 GHz wideband transistors BFG25AW; BFG25AW/X FEATURES PINNING Low current consumption PIN DESCRIPTION fpage 4 3 (100 A to 1 mA) BFG25AW Low noise figure 1 collector ... See More ⇒

 8.1. Size:99K  philips

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BFG25AW

DISCRETE SEMICONDUCTORS DATA SHEET BFG25A/X NPN 5 GHz wideband transistor 1997 Oct 29 Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG25A/X FEATURES DESCRIPTION Low current consumption NPN silicon wideband transistor in a (100 A to 1 mA) four-lead dua... See More ⇒

Detailed specifications: BCP69-16, BCP69-25, BCW61B, BCW61C, BF820W, BF824W, BFG10W, BFG25A, BD139, BFG310, BFG310W, BFG325, BFG325W, BFG410W, BFG424F, BFG424W, BFG540

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