All Transistors. BFG25AW Datasheet

 

BFG25AW Datasheet and Replacement


   Type Designator: BFG25AW
   SMD Transistor Code: N6
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 8 V
   Maximum Collector-Emitter Voltage |Vce|: 5 V
   Maximum Emitter-Base Voltage |Veb|: 2 V
   Maximum Collector Current |Ic max|: 0.0065 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 5000 MHz
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: SOT343N
 

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BFG25AW Datasheet (PDF)

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BFG25AW

DATA SHEETdbook, halfpageM3D123BFG25AW; BFG25AW/XNPN 5 GHz wideband transistorsProduct specification 1998 Sep 23Supersedes data of August 1995NXP Semiconductors Product specificationBFG25AW;NPN 5 GHz wideband transistorsBFG25AW/XFEATURES PINNING Low current consumption PIN DESCRIPTIONlfpage4 3(100 Ato1mA)BFG25AW Low noise figure1 collector G

 ..2. Size:117K  philips
 bfg25aw bfg25awx 3.pdf pdf_icon

BFG25AW

DATA SHEETbook, halfpageM3D123BFG25AW; BFG25AW/XNPN 5 GHz wideband transistors1998 Sep 23Product specificationSupersedes data of August 1995Philips Semiconductors Product specificationNPN 5 GHz wideband transistors BFG25AW; BFG25AW/XFEATURES PINNING Low current consumptionPIN DESCRIPTIONfpage4 3(100 A to 1 mA)BFG25AW Low noise figure1 collector

 8.1. Size:99K  philips
 bfg25ax.pdf pdf_icon

BFG25AW

DISCRETE SEMICONDUCTORSDATA SHEETBFG25A/XNPN 5 GHz wideband transistor1997 Oct 29Product specificationSupersedes data of September 1995File under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 5 GHz wideband transistor BFG25A/XFEATURES DESCRIPTION Low current consumption NPN silicon wideband transistor in a(100 A to 1 mA) four-lead dua

Datasheet: BCP69-16 , BCP69-25 , BCW61B , BCW61C , BF820W , BF824W , BFG10W , BFG25A , 2N5551 , BFG310 , BFG310W , BFG325 , BFG325W , BFG410W , BFG424F , BFG424W , BFG540 .

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