All Transistors. BFU690F Datasheet

 

BFU690F Datasheet and Replacement


   Type Designator: BFU690F
   SMD Transistor Code: D4*
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.23 W
   Maximum Collector-Base Voltage |Vcb|: 16 V
   Maximum Collector-Emitter Voltage |Vce|: 5.5 V
   Maximum Emitter-Base Voltage |Veb|: 2.5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 18000 MHz
   Forward Current Transfer Ratio (hFE), MIN: 90
   Noise Figure, dB: -
   Package: SOT343F
 

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BFU690F Datasheet (PDF)

 ..1. Size:107K  philips
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BFU690F

BFU690FNPN wideband silicon RF transistorRev. 1 16 December 2010 Product data sheet1. Product profile1.1 General descriptionNPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices

 ..2. Size:132K  nxp
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BFU690F

BFU690FNPN wideband silicon RF transistorRev. 2 14 March 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.1.2 Features and benefits Low noise high linearity microwave transistor High output third-order intercept point 34 dBm at 1.8 G

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

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