BFU760F Datasheet, Equivalent, Cross Reference Search
Type Designator: BFU760F
SMD Transistor Code: D7*
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.22 W
Maximum Collector-Base Voltage |Vcb|: 10 V
Maximum Collector-Emitter Voltage |Vce|: 2.8 V
Maximum Emitter-Base Voltage |Veb|: 1 V
Maximum Collector Current |Ic max|: 0.07 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 45000 MHz
Forward Current Transfer Ratio (hFE), MIN: 155
Noise Figure, dB: -
Package: SOT343F
BFU760F Transistor Equivalent Substitute - Cross-Reference Search
BFU760F Datasheet (PDF)
bfu760f.pdf
BFU760FNPN wideband silicon germanium RF transistorRev. 1 29 April 2011 Product data sheet1. Product profile1.1 General descriptionNPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic
bfu768f.pdf
BFU768FNPN wideband silicon germanium RF transistorRev. 1.2 24 December 2012 Product data sheet1. Product profile1.1 General descriptionNPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrost
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
