All Transistors. BFU760F Datasheet

 

BFU760F Datasheet and Replacement


   Type Designator: BFU760F
   SMD Transistor Code: D7*
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.22 W
   Maximum Collector-Base Voltage |Vcb|: 10 V
   Maximum Collector-Emitter Voltage |Vce|: 2.8 V
   Maximum Emitter-Base Voltage |Veb|: 1 V
   Maximum Collector Current |Ic max|: 0.07 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 45000 MHz
   Forward Current Transfer Ratio (hFE), MIN: 155
   Noise Figure, dB: -
   Package: SOT343F
 

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BFU760F Datasheet (PDF)

 ..1. Size:121K  nxp
 bfu760f.pdf pdf_icon

BFU760F

BFU760FNPN wideband silicon germanium RF transistorRev. 1 29 April 2011 Product data sheet1. Product profile1.1 General descriptionNPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic

 9.1. Size:163K  nxp
 bfu768f.pdf pdf_icon

BFU760F

BFU768FNPN wideband silicon germanium RF transistorRev. 1.2 24 December 2012 Product data sheet1. Product profile1.1 General descriptionNPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrost

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

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