2N5611 Specs and Replacement
Type Designator: 2N5611
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 560 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO66
- BJT ⓘ Cross-Reference Search
2N5611 datasheet
..1. Size:11K semelab
2n5611.pdf 
2N5611 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250) Metal Package. 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. Bipolar PNP Device. 1 2 VCEO = 100V IC = 5A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci... See More ⇒
..2. Size:126K jmnic
2n5605 2n5607 2n5609 2n5611.pdf
Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5605 2N5607 2N5609 2N5611 DESCRIPTION With TO-66 package Excellent safe operating area Low collector-emitter saturation voltage APPLICATIONS For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66)... See More ⇒
..3. Size:127K inchange semiconductor
2n5605 2n5607 2n5609 2n5611.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5605 2N5607 2N5609 2N5611 DESCRIPTION With TO-66 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol ... See More ⇒
..4. Size:305K inchange semiconductor
2n5611.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N5611 DESCRIPTION DC Current Gain- hFE= 30-90@IC= -2.5A Wide Area of Safe Operation Collector-Emitter Sustaining Voltage- VCEO(SUS)= -100V(Min) Complement to Type 2N5612 APPLICATIONS Designed for use in high frequency power amplifiers, audio power amplifier and drivers. ABS... See More ⇒
0.1. Size:129K inchange semiconductor
2n5611a.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5611A DESCRIPTION With TO-66 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolu... See More ⇒
9.2. Size:11K semelab
2n5613.pdf
2N5613 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar PNP Device. 3 VCEO = 60V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ac... See More ⇒
9.3. Size:11K semelab
2n5619.pdf
2N5619 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar PNP Device. 3 VCEO = 80V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ac... See More ⇒
9.4. Size:11K semelab
2n5617.pdf
2N5617 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar PNP Device. 3 VCEO = 80V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ac... See More ⇒
9.5. Size:113K jmnic
2n5606 2n5608 2n5610 2n5612.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5606 2N5608 2N5610 2N5612 DESCRIPTION With TO-66 package Excellent safe operating area Low collector-emitter saturation voltage APPLICATIONS For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66)... See More ⇒
9.6. Size:127K inchange semiconductor
2n5606 2n5608 2n5610 2n5612.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5606 2N5608 2N5610 2N5612 DESCRIPTION With TO-66 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol ... See More ⇒
9.7. Size:118K inchange semiconductor
2n5613 2n5615 2n5617 2n5619.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5613 2N5615 2N5617 2N5619 DESCRIPTION With TO-3 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol ... See More ⇒
9.8. Size:50K inchange semiconductor
2n5610.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N5610 DESCRIPTION DC Current Gain- hFE= 70-200@IC= 2.5A Wide Area of Safe Operation Collector-Emitter Sustaining Voltage- VCEO(SUS)= 80V(Min) Complement to Type 2N5609 APPLICATIONS Designed for use in high frequency power amplifiers, audio power amplifier and drivers. ABSO... See More ⇒
9.9. Size:126K inchange semiconductor
2n5612a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5612A DESCRIPTION With TO-66 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absol... See More ⇒
9.10. Size:36K inchange semiconductor
2n5619.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N5619 DESCRIPTION DC Current Gain- hFE= 30-90@IC= -2.5A Wide Area of Safe Operation Collector-Emitter Sustaining Voltage- VCEO(SUS)= -100V(Min) Complement to Type 2N5620 APPLICATIONS Designed for use in high frequency power amplifiers, audio power amplifier and drivers. AB... See More ⇒
9.11. Size:118K inchange semiconductor
2n5614 2n5616 2n5618 2n5620.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5614 2N5616 2N5618 2N5620 DESCRIPTION With TO-3 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3... See More ⇒
Detailed specifications: 2N5604, 2N5605, 2N5606, 2N5607, 2N5608, 2N5609, 2N561, 2N5610, S8050, 2N5611A, 2N5612, 2N5612A, 2N5613, 2N5614, 2N5615, 2N5616, 2N5617
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