All Transistors. PBRP113ET Datasheet

 

PBRP113ET Datasheet and Replacement


   Type Designator: PBRP113ET
   SMD Transistor Code: *7K_-7K_p7K_t7K_W7K
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 1 kOhm
   Built in Bias Resistor R2 = 1 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 11 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: SOT23
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PBRP113ET Datasheet (PDF)

 6.1. Size:104K  nxp
 pbrp113e.pdf pdf_icon

PBRP113ET

PBRP113ETPNP 800 mA, 40 V BISS RET; R1 = 1 k, R2 = 1 kRev. 01 17 December 2007 Product data sheet1. Product profile1.1 General description800 mA PNP low VCEsat Breakthrough In Small Signal (BISS) Resistor-EquippedTransistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plasticpackage.NPN complement: PBRN113ET.1.2 Features 800 mA repetitive peak out

 7.1. Size:115K  philips
 pbrp113zt.pdf pdf_icon

PBRP113ET

PBRP113ZTPNP 800 mA, 40 V BISS RET; R1 = 1 k, R2 = 10 kRev. 01 16 January 2008 Product data sheet1. Product profile1.1 General description800 mA PNP low VCEsat Breakthrough In Small Signal (BISS) Resistor-EquippedTransistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plasticpackage.NPN complement: PBRN113ZT.1.2 Features 800 mA repetitive peak out

 9.1. Size:112K  philips
 pbrp123et.pdf pdf_icon

PBRP113ET

PBRP123ETPNP 800 mA, 40 V BISS RET; R1 = 2.2 k, R2 = 2.2 kRev. 01 16 January 2008 Product data sheet1. Product profile1.1 General description800 mA PNP low VCEsat Breakthrough In Small Signal (BISS) Resistor-EquippedTransistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plasticpackage.NPN complement: PBRN123ET.1.2 Features 800 mA repetitive peak

 9.2. Size:114K  philips
 pbrp123yt.pdf pdf_icon

PBRP113ET

PBRP123YTPNP 800 mA, 40 V BISS RET; R1 = 2.2 k, R2 = 10 kRev. 01 17 December 2007 Product data sheet1. Product profile1.1 General description800 mA PNP low VCEsat Breakthrough In Small Signal (BISS) Resistor-EquippedTransistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plasticpackage.NPN complement: PBRN123YT.1.2 Features 800 mA repetitive peak

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Keywords - PBRP113ET transistor datasheet

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