All Transistors. PBSS303NZ Datasheet

 

PBSS303NZ Datasheet and Replacement


   Type Designator: PBSS303NZ
   SMD Transistor Code: S303NZ
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 5.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 130 MHz
   Collector Capacitance (Cc): 60 pF
   Forward Current Transfer Ratio (hFE), MIN: 300
   Noise Figure, dB: -
   Package: SOT223
 

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PBSS303NZ Datasheet (PDF)

 ..1. Size:152K  nxp
 pbss303nz.pdf pdf_icon

PBSS303NZ

PBSS303NZ30 V, 5.5 A NPN low VCEsat (BISS) transistorRev. 02 20 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS303PZ.1.2 Features Low collector-emitter saturation voltage VCEsat High collector c

 6.1. Size:175K  nxp
 pbss303nd.pdf pdf_icon

PBSS303NZ

PBSS303ND60 V, 3 A NPN low VCEsat (BISS) transistorRev. 02 14 December 2007 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS303PD.1.2 Features Low collector-emitter saturation voltage VCEsat High collector curr

 6.2. Size:126K  nxp
 pbss303nx.pdf pdf_icon

PBSS303NZ

PBSS303NX30 V, 5.1 A NPN low VCEsat (BISS) transistorRev. 01 23 August 2006 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89(SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS303PX.1.2 Features Low collector-emitter saturation voltage VCEsat

 7.1. Size:191K  nxp
 pbss303pd.pdf pdf_icon

PBSS303NZ

PBSS303PD60 V, 3 A PNP low VCEsat (BISS) transistorRev. 02 20 November 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS303ND.1.2 Features Low collector-emitter saturation voltage VCEsat High collector cur

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Datasheet: PBSS302ND , PBSS302NX , PBSS302NZ , PBSS302PD , PBSS302PX , PBSS302PZ , PBSS303ND , PBSS303NX , NJW0281G , PBSS303PD , PBSS303PX , PBSS303PZ , PBSS304ND , PBSS304NX , PBSS304NZ , PBSS304PD , PBSS304PX .

History: GI2715 | 2SC1261F | 2SC1779A | BU2520D | DC5203 | ET365 | DTC114GUA

Keywords - PBSS303NZ transistor datasheet

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