PBSS303NZ Datasheet. Specs and Replacement

Type Designator: PBSS303NZ  📄📄 

SMD Transistor Code: S303NZ

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 2 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 5.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 130 MHz

Collector Capacitance (Cc): 60 pF

Forward Current Transfer Ratio (hFE), MIN: 300

Noise Figure, dB: -

Package: SOT223

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PBSS303NZ datasheet

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PBSS303NZ

PBSS303NZ 30 V, 5.5 A NPN low VCEsat (BISS) transistor Rev. 02 20 November 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS303PZ. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector c... See More ⇒

 6.1. Size:175K  nxp

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PBSS303NZ

PBSS303ND 60 V, 3 A NPN low VCEsat (BISS) transistor Rev. 02 14 December 2007 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS303PD. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector curr... See More ⇒

 6.2. Size:126K  nxp

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PBSS303NZ

PBSS303NX 30 V, 5.1 A NPN low VCEsat (BISS) transistor Rev. 01 23 August 2006 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement PBSS303PX. 1.2 Features Low collector-emitter saturation voltage VCEsat ... See More ⇒

 7.1. Size:191K  nxp

 pbss303pd.pdf pdf_icon

PBSS303NZ

PBSS303PD 60 V, 3 A PNP low VCEsat (BISS) transistor Rev. 02 20 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement PBSS303ND. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector cur... See More ⇒

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Detailed specifications: PBSS302ND, PBSS302NX, PBSS302NZ, PBSS302PD, PBSS302PX, PBSS302PZ, PBSS303ND, PBSS303NX, D965, PBSS303PD, PBSS303PX, PBSS303PZ, PBSS304ND, PBSS304NX, PBSS304NZ, PBSS304PD, PBSS304PX

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