PBSS305ND Datasheet, Equivalent, Cross Reference Search
Type Designator: PBSS305ND
SMD Transistor Code: AG
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 2.5 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 140 MHz
Collector Capacitance (Cc): 16 pF
Forward Current Transfer Ratio (hFE), MIN: 170
Noise Figure, dB: -
Package: SOT457 SC74
PBSS305ND Transistor Equivalent Substitute - Cross-Reference Search
PBSS305ND Datasheet (PDF)
pbss305nd.pdf
PBSS305ND100 V, 3 A NPN low VCEsat (BISS) transistorRev. 02 7 December 2007 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS305PD.1.2 Features Low collector-emitter saturation voltage VCEsat High collector curr
pbss305nx.pdf
PBSS305NX80 V, 4.6 A NPN low VCEsat (BISS) transistorRev. 02 8 December 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS305PX.1.2 Features Low collector-emitter saturation voltage VCEsat
pbss305nz.pdf
PBSS305NZ80 V, 5.1 A NPN low VCEsat (BISS) transistorRev. 02 8 December 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS305PZ.1.2 Features Low collector-emitter saturation voltage VCEsat High collector cu
pbss305nx.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
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