All Transistors. PBSS3515M Datasheet

 

PBSS3515M Datasheet, Equivalent, Cross Reference Search


   Type Designator: PBSS3515M
   SMD Transistor Code: DB
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.43 W
   Maximum Collector-Base Voltage |Vcb|: 15 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 10 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SOT883

 PBSS3515M Transistor Equivalent Substitute - Cross-Reference Search

   

PBSS3515M Datasheet (PDF)

 ..1. Size:142K  philips
pbss3515m.pdf

PBSS3515M
PBSS3515M

DISCRETE SEMICONDUCTORS DATA SHEETM3D883BOTTOM VIEWPBSS3515M15 V, 0.5 A PNP low VCEsat (BISS) transistorProduct data sheet 2003 Jul 22NXP Semiconductors Product data sheet15 V, 0.5 A PBSS3515MPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsatSYMBOL PARAMETER MAX. UNIT High collector current capabili

 ..2. Size:347K  nxp
pbss3515m.pdf

PBSS3515M
PBSS3515M

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 0.1. Size:547K  nxp
pbss3515mb.pdf

PBSS3515M
PBSS3515M

PBSS3515MB15 V, 0.5 A PNP low VCEsat (BISS) transistorRev. 1 6 March 2012 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS2515MB.1.2 Features and benefits Leadless ultra small SMD plastic High ef

 6.1. Size:64K  philips
pbss3515f 1.pdf

PBSS3515M
PBSS3515M

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PBSS3515FPNP transistorProduct specification 2000 Oct 25Philips Semiconductors Product specificationPNP transistor PBSS3515FFEATURES PINNING Low VCEsatPIN DESCRIPTION High current capabilities.1 base2 emitterAPPLICATIONS3 collector Heavy duty battery powered equipment (Automotive,Telecom and Audio Video) such as

 6.2. Size:113K  nxp
pbss3515e.pdf

PBSS3515M
PBSS3515M

PBSS3515E15 V, 0.5 A PNP low VCEsat (BISS) transistorRev. 02 27 April 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in an ultra smallSOT416 (SC-75) Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS2515E.1.2 Features Low collector-emitter saturation voltage VCEsat High collecto

 6.3. Size:74K  nxp
pbss3515vs.pdf

PBSS3515M
PBSS3515M

DISCRETE SEMICONDUCTORSDATA SHEETM3D744PBSS3515VS15 V low VCEsat PNP doubletransistorProduct specification 2001 Nov 07Supersedes data of 2001 Sep 27Philips Semiconductors Product specification15 V low VCEsat PNP double transistorPBSS3515VSFEATURES QUICK REFERENCE DATA 300 mW total power dissipationSYMBOL PARAMETER MAX. UNIT Very small 1.6 x 1.2 mm ultra thin p

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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