PBSS4032NT Datasheet. Specs and Replacement
Type Designator: PBSS4032NT 📄📄
SMD Transistor Code: *BM
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 180 MHz
Collector Capacitance (Cc): 28 pF
Forward Current Transfer Ratio (hFE), MIN: 300
Package: SOT23
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PBSS4032NT Substitution
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PBSS4032NT datasheet
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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒
PBSS4032ND 30 V, 3.5 A NPN low VCEsat (BISS) transistor Rev. 01 30 January 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS4032PD. 1.2 Features Low collector-emitter saturation voltage VCEsat Optimized switc... See More ⇒
PBSS4032NZ 30 V, 4.9 A NPN low VCEsat (BISS) transistor Rev. 01 31 March 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement PBSS4032PZ. 1.2 Features and benefits Low collector-emitter saturation voltage VCEsat... See More ⇒
Detailed specifications: PBSS3515E, PBSS3515M, PBSS3515VS, PBSS3540E, PBSS3540M, PBSS4021NT, PBSS4021PT, PBSS4032ND, BC547, PBSS4032PD, PBSS4032PT, PBSS4041NT, PBSS4041PT, PBSS4120T, PBSS4130T, PBSS4140DPN, PBSS4140T
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