PBSS4120T Datasheet. Specs and Replacement
Type Designator: PBSS4120T 📄📄
SMD Transistor Code: *3B
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 350
Noise Figure, dB: -
Package: SOT23
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PBSS4120T datasheet
..1. Size:244K philips
pbss4120t.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET M3D088 PBSS4120T 20 V, 1 A NPN low VCEsat (BISS) transistor Product data sheet 2003 Sep 29 NXP Semiconductors Product data sheet 20 V, 1 A PBSS4120T NPN low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat SYMBOL PARAMETER MAX. UNIT High collector current capability IC and ICM VC... See More ⇒
..2. Size:455K nxp
pbss4120t.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒
8.1. Size:207K philips
pbss4160ds.pdf
PBSS4160DS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor Rev. 04 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. PNP/PNP complement PBSS5160DS. 1.2 Features Low collector-emitter saturation voltage VCEsat High ... See More ⇒
8.2. Size:258K philips
pbss4140t.pdf
DISCRETE SEMICONDUCTORS DATA SHEET PBSS4140T 40 V, 1A NPN low VCEsat (BISS) transistor Product data sheet 2005 Feb 24 Supersedes data of 2005 Feb 14 NXP Semiconductors Product data sheet 40 V, 1A PBSS4140T NPN low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage SYMBOL PARAMETER MAX. UNIT High current capabilities. VCEO ... See More ⇒
8.3. Size:49K philips
pbss4130t.pdf
DISCRETE SEMICONDUCTORS DATA SHEET M3D088 PBSS4130T 30 V, 1 A NPN low VCEsat (BISS) transistor Product specification 2003 Nov 27 Philips Semiconductors Product specification 30 V, 1 A PBSS4130T NPN low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat SYMBOL PARAMETER MAX. UNIT High collector current capability IC and I... See More ⇒
8.4. Size:259K philips
pbss4140u.pdf
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 PBSS4140U 40 V low VCEsat NPN transistor Product data sheet 2001 Jul 13 Supersedes data of 2001 Mar 27 NXP Semiconductors Product data sheet 40 V low VCEsat NPN transistor PBSS4140U FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage SYMBOL PARAMETER MAX. UNIT High current capabilities. VCEO ... See More ⇒
8.6. Size:258K philips
pbss4160dpn.pdf
PBSS4160DPN 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor Rev. 03 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC... See More ⇒
8.7. Size:342K philips
pbss4140dpn.pdf
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D302 PBSS4140DPN 40 V low VCEsat NPN/PNP transistor Product data sheet 2001 Dec 13 NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor PBSS4140DPN FEATURES QUICK REFERENCE DATA 600 mW total power dissipation SYMBOL PARAMETER MAX. UNIT Low collector-emitter saturation voltage VCEO collector-emitt... See More ⇒
8.8. Size:324K nxp
pbss4160ds.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒
8.9. Size:258K nxp
pbss4160qa.pdf
PBSS4160QA 60 V, 1 A NPN low VCEsat (BISS) transistor 23 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement PBSS5160QA. 2. Features and benefits Very low collector-emitter ... See More ⇒
8.10. Size:192K nxp
pbss4160u.pdf
PBSS4160U 60 V, 1 A NPN low VCEsat (BISS) transistor Rev. 03 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT323 (SC-70) Surface Mounted Device (SMD) plastic package. PNP complement PBSS5160U. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current c... See More ⇒
8.11. Size:470K nxp
pbss4140t.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒
8.12. Size:257K nxp
pbss4130qa.pdf
PBSS4130QA 30 V, 1 A NPN low VCEsat (BISS) transistor 28 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement PBSS5130QA. 2. Features and benefits Very low collector-emitter ... See More ⇒
8.13. Size:57K nxp
pbss4140v.pdf
DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS4140V 40 V low VCEsat NPN transistor Product specification 2002 Jun 20 Supersedes data of 2001 Nov 05 Philips Semiconductors Product specification 40 V low VCEsat NPN transistor PBSS4140V FEATURES QUICK REFERENCE DATA 300 mW total power dissipation SYMBOL PARAMETER MAX. UNIT Very small 1.6 mm x 1.2 mm x 0.55 mm ultra thin VCEO... See More ⇒
8.14. Size:149K nxp
pbss4160v.pdf
PBSS4160V 60 V, 1 A NPN low VCEsat (BISS) transistor Rev. 03 11 December 2009 Product data sheet 1. Product profile 1.1 General description Low VCEsat (BISS) NPN transistor in a SOT666 plastic package. PNP complement PBSS5160V. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency, reduces heat generation Re... See More ⇒
8.15. Size:165K nxp
pbss4130t.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒
8.16. Size:280K nxp
pbss4160pans.pdf
PBSS4160PANS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 11 February 2015 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN/PNP complement PBSS4160PANPS. PNP/PNP complement PBSS5160PAPS. 2.... See More ⇒
8.17. Size:359K nxp
pbss4160panp.pdf
PBSS4160PANP 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor 14 January 2013 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement PBSS4160PAN. PNP/PNP complement PBSS5160PAP. 2. Features and benefits Very low collecto... See More ⇒
8.18. Size:337K nxp
pbss4130panp.pdf
PBSS4130PANP 30 V, 1 A NPN/PNP low VCEsat (BISS) transistor 12 December 2012 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement PBSS4130PAN. PNP/PNP complement PBSS5130PAP. 2. Features and benefits Very low collect... See More ⇒
8.19. Size:247K nxp
pbss4112pan.pdf
PBSS4112PAN 120 V, 1 A NPN/NPN low VCEsat (BISS) transistor 29 November 2012 Product data sheet 1. Product profile 1.1 General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement PBSS4112PANP. PNP/PNP complement PBSS5112PAP. 1.2 Features and benefit... See More ⇒
8.20. Size:327K nxp
pbss4160panps.pdf
PBSS4160PANPS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 11 February 2015 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN/NPN complement PBSS4160PANS. PNP/PNP complement PBSS5160PAPS. 2.... See More ⇒
8.21. Size:336K nxp
pbss4112panp.pdf
PBSS4112PANP 120 V, 1 A NPN/PNP low VCEsat (BISS) transistor 29 November 2012 Product data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement PBSS4112PAN. PNP/PNP complement PBSS5112PAP. 1.2 Features and benefit... See More ⇒
8.22. Size:466K nxp
pbss4140u.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒
8.23. Size:567K nxp
pbss4160t.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒
8.24. Size:375K nxp
pbss4160dpn.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒
8.25. Size:268K nxp
pbss4130pan.pdf
PBSS4130PAN 30 V, 1 A NPN/NPN low VCEsat (BISS) transistor 11 January 2013 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement PBSS4130PANP. PNP/PNP complement PBSS5130PAP. 2. Features and benefits Very low collecto... See More ⇒
8.26. Size:268K nxp
pbss4160pan.pdf
PBSS4160PAN 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 14 January 2013 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement PBSS4160PANP. PNP/PNP complement PBSS5160PAP. 2. Features and benefits Very low collecto... See More ⇒
8.27. Size:342K nxp
pbss4140dpn.pdf
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D302 PBSS4140DPN 40 V low VCEsat NPN/PNP transistor Product data sheet 2001 Dec 13 NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor PBSS4140DPN FEATURES QUICK REFERENCE DATA 600 mW total power dissipation SYMBOL PARAMETER MAX. UNIT Low collector-emitter saturation voltage VCEO collector-emitt... See More ⇒
8.28. Size:215K nxp
pbss4160x.pdf
PBSS4160X 60 V, 1 A NPN low VCEsat BISS transistor 23 May 2017 Product data sheet 1. General description NPN low VCEsat Breakthrough in Smal Signal (BISS) transitor in a medium power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High ... See More ⇒
8.29. Size:442K blue-rocket-elect
pbss4140s.pdf
PBSS4140S(BR3DG4140SK) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High PC, low VCE(sat), high current switching. / Applications ... See More ⇒
Detailed specifications: PBSS4021NT, PBSS4021PT, PBSS4032ND, PBSS4032NT, PBSS4032PD, PBSS4032PT, PBSS4041NT, PBSS4041PT, 2N2222, PBSS4130T, PBSS4140DPN, PBSS4140T, PBSS4140U, PBSS4140V, PBSS4160DPN, PBSS4160DS, PBSS4160T
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