PBSS4130T Datasheet. Specs and Replacement

Type Designator: PBSS4130T  📄📄 

SMD Transistor Code: *3C

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 20 pF

Forward Current Transfer Ratio (hFE), MIN: 350

Noise Figure, dB: -

Package: SOT23

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PBSS4130T datasheet

 ..1. Size:49K  philips

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PBSS4130T

DISCRETE SEMICONDUCTORS DATA SHEET M3D088 PBSS4130T 30 V, 1 A NPN low VCEsat (BISS) transistor Product specification 2003 Nov 27 Philips Semiconductors Product specification 30 V, 1 A PBSS4130T NPN low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat SYMBOL PARAMETER MAX. UNIT High collector current capability IC and I... See More ⇒

 ..2. Size:165K  nxp

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PBSS4130T

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒

 6.1. Size:257K  nxp

 pbss4130qa.pdf pdf_icon

PBSS4130T

PBSS4130QA 30 V, 1 A NPN low VCEsat (BISS) transistor 28 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement PBSS5130QA. 2. Features and benefits Very low collector-emitter ... See More ⇒

 6.2. Size:337K  nxp

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PBSS4130T

PBSS4130PANP 30 V, 1 A NPN/PNP low VCEsat (BISS) transistor 12 December 2012 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement PBSS4130PAN. PNP/PNP complement PBSS5130PAP. 2. Features and benefits Very low collect... See More ⇒

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Detailed specifications: PBSS4021PT, PBSS4032ND, PBSS4032NT, PBSS4032PD, PBSS4032PT, PBSS4041NT, PBSS4041PT, PBSS4120T, 2N5551, PBSS4140DPN, PBSS4140T, PBSS4140U, PBSS4140V, PBSS4160DPN, PBSS4160DS, PBSS4160T, PBSS4160U

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