PBSS4230T Datasheet. Specs and Replacement
Type Designator: PBSS4230T 📄📄
SMD Transistor Code: *3D
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 350
Package: SOT23
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PBSS4230T datasheet
DISCRETE SEMICONDUCTORS DATA SHEET M3D088 PBSS4230T 30 V, 2 A NPN low VCEsat (BISS) transistor Product data sheet 2003 Sep 29 NXP Semiconductors Product data sheet 30 V, 2 A PBSS4230T NPN low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat SYMBOL PARAMETER MAX. UNIT High collector current capability IC and ICM VC... See More ⇒
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒
PBSS4230PAN 30 V, 2 A NPN/NPN low VCEsat (BISS) transistor 14 December 2012 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement PBSS4230PANP. PNP/PNP complement PBSS5230PAP. 2. Features and benefits Very low collect... See More ⇒
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Detailed specifications: PBSS4140U, PBSS4140V, PBSS4160DPN, PBSS4160DS, PBSS4160T, PBSS4160U, PBSS4160V, PBSS4220V, TIP122, PBSS4240DPN, PBSS4240T, PBSS4240V, PBSS4240Y, PBSS4250X, PBSS4320T, PBSS4320X, PBSS4330PA
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