PBSS5160V Datasheet. Specs and Replacement

Type Designator: PBSS5160V  📄📄 

SMD Transistor Code: 51

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.9 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 15 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: SOT666

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PBSS5160V datasheet

 ..1. Size:136K  nxp

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PBSS5160V

PBSS5160V 60 V, 1 A PNP low VCEsat (BISS) transistor Rev. 03 14 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signals (BISS) transistor in a SOT666 plastic package. NPN complement PBSS4160V. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficie... See More ⇒

 6.1. Size:141K  philips

pbss5160ds.pdf pdf_icon

PBSS5160V

PBSS5160DS 60 V, 1 A PNP/PNP low VCEsat (BISS) transistor Rev. 03 9 October 2008 Product data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor pair in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4160DS. 1.2 Features Low collector-emitter saturation voltage VCEsat High c... See More ⇒

 6.2. Size:284K  philips

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PBSS5160V

PBSS5160T 60 V, 1 A PNP low VCEsat (BISS) transistor Rev. 03 18 July 2008 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as sh... See More ⇒

 6.3. Size:127K  philips

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PBSS5160V

PBSS5160U 60 V, 1 A PNP low VCEsat (BISS) transistor Rev. 04 2 October 2008 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4160U. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector c... See More ⇒

Detailed specifications: PBSS5120T, PBSS5130T, PBSS5140T, PBSS5140U, PBSS5140V, PBSS5160DS, PBSS5160T, PBSS5160U, 2SD313, PBSS5220T, PBSS5220V, PBSS5230T, PBSS5240T, PBSS5240V, PBSS5240Y, PBSS5250T, PBSS5250X

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