PBSS5250T Datasheet PDF and Replacements, Transistor Equivalent Finder, Cross Reference

PBSS5250T Datasheet. Specs and Replacement

Type Designator: PBSS5250T 📄📄

SMD Transistor Code: 3H*

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 35 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: SOT23

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PBSS5250T datasheet

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DISCRETE SEMICONDUCTORS DATA SHEET ge M3D088 PBSS5250T 50 V, 2 A PNP low VCEsat (BISS) transistor Product specification 2003 Oct 09 Philips Semiconductors Product specification 50 V, 2 A PBSS5250T PNP low VCEsat (BISS) transistor QUICK REFERENCE DATA FEATURES SYMBOL PARAMETER MAX. UNIT Low collector-emitter saturation voltage VCEsat VCEO collector-emitter voltage -50 V ... See More ⇒

0.1. Size:242K nxp

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PBSS5250TH 50 V, 2 A PNP low VCEsat (BISS) transistor 9 August 2017 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collec... See More ⇒

6.1. Size:147K philips

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DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS5250X 50 V, 2 A PNP low VCEsat (BISS) transistor Product data sheet 2004 Nov 04 Supersedes data of 2003 Jun 17 NXP Semiconductors Product data sheet 50 V, 2 A PBSS5250X PNP low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA SOT89 (SC-62) package SYMBOL PARAMETER MAX. UNIT Low collector-emitter sat... See More ⇒

6.2. Size:147K nxp

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