PBSS5540X Datasheet, Equivalent, Cross Reference Search
Type Designator: PBSS5540X
SMD Transistor Code: *1G
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.55 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 60 MHz
Collector Capacitance (Cc): 105 pF
Forward Current Transfer Ratio (hFE), MIN: 250
Noise Figure, dB: -
Package: SOT89
PBSS5540X Transistor Equivalent Substitute - Cross-Reference Search
PBSS5540X Datasheet (PDF)
pbss5540x.pdf
DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D109PBSS5540X40 V, 5 A PNP low VCEsat (BISS) transistorProduct data sheet 2004 Nov 04Supersedes data of 2004 Jan 15NXP Semiconductors Product data sheet40 V, 5 A PBSS5540XPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsatSYMBOL PARAMETER MAX. UNIT
pbss5540x.pdf
DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D109PBSS5540X40 V, 5 A PNP low VCEsat (BISS) transistorProduct data sheet 2004 Nov 04Supersedes data of 2004 Jan 15NXP Semiconductors Product data sheet40 V, 5 A PBSS5540XPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsatSYMBOL PARAMETER MAX. UNIT
pbss5540z.pdf
DISCRETE SEMICONDUCTORS DATA SHEETfpageM3D087PBSS5540Z40 V low VCEsat PNP transistorProduct data sheet 2001 Sep 21Supersedes data of 2001 Jan 26NXP Semiconductors Product data sheet40 V low VCEsat PNP transistorPBSS5540ZFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltageSYMBOL PARAMETER MAX UNIT High current capabilityVCEO emitter-collect
pbss5540z 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D087PBSS5540ZPNP TransistorProduct specification 2000 Oct 25Supersedes data of 1999 Aug 04Philips Semiconductors Product specificationPNP Transistor PBSS5540ZFEATURES PINNING Low VCEsatPIN DESCRIPTION High current capabilities.1 base2 collectorAPPLICATIONS3 emitter Heavy duty battery powered equip
pbss5540z.pdf
DISCRETE SEMICONDUCTORS DATA SHEETfpageM3D087PBSS5540Z40 V low VCEsat PNP transistorProduct data sheet 2001 Sep 21Supersedes data of 2001 Jan 26NXP Semiconductors Product data sheet40 V low VCEsat PNP transistorPBSS5540ZFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltageSYMBOL PARAMETER MAX UNIT High current capabilityVCEO emitter-collect
pbss5540z-89.pdf
SMD Type TransistorsPNP TransistorsPBSS5540Z (KBSS5540Z)1.70 0.1 Features Low collector-emitter saturation voltage High current capability Improved device reliability due to reduced heat generation.0.42 0.10.46 0.1211.Base2.Collector33.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40
pbss5540z.pdf
SMD Type TransistorsPNP TransistorsPBSS5540Z (KBSS5540Z)Unit:mmSOT-2236.500.23.000.1 Features4 Low collector-emitter saturation voltage High current capability Improved device reliability due to reduced heat generation.1 2 32, 40.2502.30 (typ)Gauge Plane11.Base 2.Collector0.700.133.Emitter4.60 (typ) 4.Collector Absolute M
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
