All Transistors. PBSS5612PA Datasheet

 

PBSS5612PA Datasheet and Replacement


   Type Designator: PBSS5612PA
   SMD Transistor Code: A9
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 12 V
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 40 MHz
   Collector Capacitance (Cc): 175 pF
   Forward Current Transfer Ratio (hFE), MIN: 220
   Noise Figure, dB: -
   Package: SOT1061
 

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PBSS5612PA Datasheet (PDF)

 ..1. Size:154K  philips
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PBSS5612PA

PBSS5612PA12 V, 6 A PNP low VCEsat (BISS) transistorRev. 01 7 May 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.NPN complement: PBSS4612PA.1.2 Features and benefits

 ..2. Size:271K  nxp
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PBSS5612PA

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 8.1. Size:350K  philips
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PBSS5612PA

PBSS5630PA30 V, 6 A PNP low VCEsat (BISS) transistorRev. 01 19 March 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.NPN complement: PBSS4630PA.1.2 Features and benefits

 8.2. Size:168K  philips
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PBSS5612PA

PBSS5620PA20 V, 6 A PNP low VCEsat (BISS) transistorRev. 01 13 April 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.NPN complement: PBSS4620PA.1.2 Features and benefits

Datasheet: PBSS5420D , PBSS5440D , PBSS5480X , PBSS5520X , PBSS5540X , PBSS5540Z , PBSS5560PA , PBSS5580PA , 2SA1015 , PBSS5620PA , PBSS5630PA , PBSS8110D , PBSS8110T , PBSS8110X , PBSS8110Y , PBSS8110Z , PBSS8510PA .

Keywords - PBSS5612PA transistor datasheet

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