PBSS5612PA Datasheet. Specs and Replacement

Type Designator: PBSS5612PA  📄📄 

SMD Transistor Code: A9

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 12 V

Maximum Collector-Emitter Voltage |Vce|: 12 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 40 MHz

Collector Capacitance (Cc): 175 pF

Forward Current Transfer Ratio (hFE), MIN: 220

Noise Figure, dB: -

Package: SOT1061

 PBSS5612PA Substitution

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PBSS5612PA datasheet

 ..1. Size:154K  philips

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PBSS5612PA

PBSS5612PA 12 V, 6 A PNP low VCEsat (BISS) transistor Rev. 01 7 May 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement PBSS4612PA. 1.2 Features and benefits ... See More ⇒

 ..2. Size:271K  nxp

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PBSS5612PA

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒

 8.1. Size:350K  philips

pbss5630pa.pdf pdf_icon

PBSS5612PA

PBSS5630PA 30 V, 6 A PNP low VCEsat (BISS) transistor Rev. 01 19 March 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement PBSS4630PA. 1.2 Features and benefits... See More ⇒

 8.2. Size:168K  philips

pbss5620pa.pdf pdf_icon

PBSS5612PA

PBSS5620PA 20 V, 6 A PNP low VCEsat (BISS) transistor Rev. 01 13 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement PBSS4620PA. 1.2 Features and benefits... See More ⇒

Detailed specifications: PBSS5420D, PBSS5440D, PBSS5480X, PBSS5520X, PBSS5540X, PBSS5540Z, PBSS5560PA, PBSS5580PA, BC639, PBSS5620PA, PBSS5630PA, PBSS8110D, PBSS8110T, PBSS8110X, PBSS8110Y, PBSS8110Z, PBSS8510PA

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