PBSS8110X PDF Specs and Replacement
Type Designator: PBSS8110X
SMD Transistor Code: *4B
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.55 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 7.5 pF
Forward Current Transfer Ratio (hFE), MIN: 150
Noise Figure, dB: -
Package: SOT89
PBSS8110X Substitution
PBSS8110X PDF detailed specifications
pbss8110x.pdf
PBSS8110X 100 V, 1 A NPN low VCEsat (BISS) transistor Rev. 01 11 May 2005 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package. PNP complement PBSS9110X. 1.2 Features SOT89 package Low collector-emitter saturation voltage VCEsat High collector current capabili... See More ⇒
pbss8110d.pdf
PBSS8110D 100 V, 1 A NPN low VCEsat (BISS) transistor Rev. 02 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat transistor in a plastic SOT457 (SC-74) package. 1.2 Features SOT457 package Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency, leading to less heat generation 1.3 ... See More ⇒
pbss8110t.pdf
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS8110T 100 V, 1 A NPN low VCEsat (BISS) transistor Product specification 2003 Dec 22 Supersedes data of 2003 Jul 28 Philips Semiconductors Product specification 100 V, 1 A PBSS8110T NPN low VCEsat (BISS) transistor QUICK REFERENCE DATA FEATURES SYMBOL PARAMETER MAX. UNIT SOT23 package VCEO collector-emitter voltag... See More ⇒
pbss8110y.pdf
PBSS8110Y 100 V, 1 A NPN low VCEsat (BISS) transistor Rev. 02 21 November 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat transistor in a SOT363 (SC-88) plastic package. 1.2 Features SOT363 package Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency reduces heat generation 1.3 Applicati... See More ⇒
Detailed specifications: PBSS5540Z , PBSS5560PA , PBSS5580PA , PBSS5612PA , PBSS5620PA , PBSS5630PA , PBSS8110D , PBSS8110T , 2N2907 , PBSS8110Y , PBSS8110Z , PBSS8510PA , PBSS9110D , PBSS9110T , PBSS9110X , PBSS9110Y , PBSS9110Z .
History: PBSS8110T
Keywords - PBSS8110X pdf specs
PBSS8110X cross reference
PBSS8110X equivalent finder
PBSS8110X pdf lookup
PBSS8110X substitution
PBSS8110X replacement
History: PBSS8110T
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y
Popular searches
d669a transistor | 2sc1419 | 2sc1124 | 2n408 | 2sc2690 | d718 datasheet | mp38 transistor | 2sc2389






