PBSS8510PA Datasheet. Specs and Replacement

Type Designator: PBSS8510PA  📄📄 

SMD Transistor Code: AE

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 5.2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 95 MHz

Collector Capacitance (Cc): 20 pF

Forward Current Transfer Ratio (hFE), MIN: 180

Noise Figure, dB: -

Package: SOT1061

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PBSS8510PA datasheet

 ..1. Size:167K  philips

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PBSS8510PA

PBSS8510PA 100 V, 5.2 A NPN low VCEsat (BISS) transistor Rev. 1 17 May 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP complement PBSS9410PA. 1.2 Features and benefits... See More ⇒

 ..2. Size:284K  nxp

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PBSS8510PA

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒

 9.1. Size:150K  nxp

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PBSS8510PA

PBSS8110D 100 V, 1 A NPN low VCEsat (BISS) transistor Rev. 02 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat transistor in a plastic SOT457 (SC-74) package. 1.2 Features SOT457 package Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency, leading to less heat generation 1.3 ... See More ⇒

 9.2. Size:135K  nxp

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PBSS8510PA

PBSS8110X 100 V, 1 A NPN low VCEsat (BISS) transistor Rev. 01 11 May 2005 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package. PNP complement PBSS9110X. 1.2 Features SOT89 package Low collector-emitter saturation voltage VCEsat High collector current capabili... See More ⇒

Detailed specifications: PBSS5612PA, PBSS5620PA, PBSS5630PA, PBSS8110D, PBSS8110T, PBSS8110X, PBSS8110Y, PBSS8110Z, 431, PBSS9110D, PBSS9110T, PBSS9110X, PBSS9110Y, PBSS9110Z, PBSS9410PA, PDTA113EE, PDTA113EM

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