All Transistors. PDTA114YE Datasheet

 

PDTA114YE Datasheet and Replacement


   Type Designator: PDTA114YE
   SMD Transistor Code: 36
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 47 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 4.7
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT416
 

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PDTA114YE Datasheet (PDF)

 ..1. Size:858K  nxp
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PDTA114YE

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 6.1. Size:174K  philips
pdta114y series.pdf pdf_icon

PDTA114YE

DISCRETE SEMICONDUCTORS DATA SHEETPDTA114Y seriesPNP resistor-equipped transistors; R1 = 10 k, R2 = 47 kProduct data sheet 2004 Aug 02Supersedes data of 2003 Sep 09NXP Semiconductors Product data sheetPNP resistor-equipped transistors; PDTA114Y seriesR1 = 10 k, R2 = 47 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT

 6.2. Size:2790K  nxp
pdta143xqa pdta123jqa pdta143zqa pdta114yqa.pdf pdf_icon

PDTA114YE

PDTA143X/123J/143Z/114YQA series50 V, 100 mA PNP resistor-equipped transistorsRev. 1 30 October 2015 Product data sheet1. Product profile1.1 General description100 mA PNP Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.Table 1. Product overviewType

 7.1. Size:29K  motorola
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PDTA114YE

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA114TEPNP resistor-equipped transistorPreliminary specification 1998 Jul 23Supersedes data of 1997 Jul 14File under Discrete Semiconductors, SC04Philips Semiconductors Preliminary specificationPNP resistor-equipped transistor PDTA114TEFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit design R

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SC1825 | TP5401 | MJE5741 | KC856W | STTIP32C | NB211YJ | KSD5005

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