PDTA123JM Specs and Replacement
Type Designator: PDTA123JM
SMD Transistor Code: DG
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 2.2 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.047
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT883
PDTA123JM Substitution
PDTA123JM datasheet
pdta123je pdta123jm pdta123jt pdta123ju.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒
pdta123jef 1.pdf
DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA123JEF PNP resistor-equipped transistor 1999 Apr 20 Preliminary specification Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA123JEF FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 k respectively) 3 handbook, halfpage 3 Simplification of circuit design R1 1 Red... See More ⇒
pdta123je 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA123JE PNP resistor-equipped transistor Product specification 1998 Nov 25 Supersedes data of 1997 Dec 15 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA123JE FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 k respectively) handbook, halfpage 3 3 Simplification of circuit d... See More ⇒
pdta123jt 1.pdf
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTA123JT PNP resistor-equipped transistor 1999 May 27 Product specification Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA123JT FEATURES Built-in bias resistors (typ 2.2 k and 47 k respectively) 3 handbook, 4 columns Simplification of circuit design 3 Reduces number ... See More ⇒
Detailed specifications: PDTA115TM , PDTA115TT , PDTA115TU , PDTA123EE , PDTA123EM , PDTA123ET , PDTA123EU , PDTA123JE , A1941 , PDTA123JT , PDTA123JU , PDTA123TE , PDTA123TM , PDTA123TT , PDTA123TU , PDTA123YE , PDTA123YM .
History: DTS708 | BF597A | BF596
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