Справочник транзисторов. PDTA123JM

 

Биполярный транзистор PDTA123JM - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: PDTA123JM
   Маркировка: DG
   Тип материала: Si
   Полярность: Pre-Biased-PNP
   Встроенный резистор цепи смещения R1 = 2.2 kOhm
   Встроенный резистор цепи смещения R2 = 47 kOhm
   Соотношение сопротивлений R1/R2 = 0.047
   Максимальная рассеиваемая мощность (Pc): 0.25 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Ёмкость коллекторного перехода (Cc): 3 pf
   Статический коэффициент передачи тока (hfe): 100
   Корпус транзистора: SOT883

 Аналоги (замена) для PDTA123JM

 

 

PDTA123JM Datasheet (PDF)

 ..1. Size:1050K  nxp
pdta123je pdta123jm pdta123jt pdta123ju.pdf

PDTA123JM
PDTA123JM

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 6.1. Size:54K  motorola
pdta123jef 1.pdf

PDTA123JM
PDTA123JM

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTA123JEFPNP resistor-equipped transistor1999 Apr 20Preliminary specificationPhilips Semiconductors Preliminary specificationPNP resistor-equipped transistor PDTA123JEFFEATURES Built-in bias resistors R1 and R2(typ. 2.2 k and 47 krespectively)3handbook, halfpage3 Simplification of circuit designR11 Red

 6.2. Size:57K  motorola
pdta123je 2.pdf

PDTA123JM
PDTA123JM

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA123JEPNP resistor-equipped transistorProduct specification 1998 Nov 25Supersedes data of 1997 Dec 15Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA123JEFEATURES Built-in bias resistors R1 and R2(typ. 2.2 k and 47 krespectively)handbook, halfpage33 Simplification of circuit d

 6.3. Size:56K  motorola
pdta123jt 1.pdf

PDTA123JM
PDTA123JM

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTA123JTPNP resistor-equipped transistor1999 May 27Product specificationPhilips Semiconductors Product specificationPNP resistor-equipped transistor PDTA123JTFEATURES Built-in bias resistors (typ 2.2 kand 47 k respectively)3handbook, 4 columns Simplification of circuit design3 Reduces number

 6.4. Size:54K  philips
pdta123jef 1.pdf

PDTA123JM
PDTA123JM

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTA123JEFPNP resistor-equipped transistor1999 Apr 20Preliminary specificationPhilips Semiconductors Preliminary specificationPNP resistor-equipped transistor PDTA123JEFFEATURES Built-in bias resistors R1 and R2(typ. 2.2 k and 47 krespectively)3handbook, halfpage3 Simplification of circuit designR11 Red

 6.5. Size:175K  philips
pdta123j series.pdf

PDTA123JM
PDTA123JM

DISCRETE SEMICONDUCTORS DATA SHEETPDTA123J seriesPNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 kProduct data sheet 2004 Aug 02Supersedes data of 2003 Apr 14NXP Semiconductors Product data sheetPNP resistor-equipped transistors; PDTA123J seriesR1 = 2.2 k, R2 = 47 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT

 6.6. Size:57K  philips
pdta123je 2.pdf

PDTA123JM
PDTA123JM

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA123JEPNP resistor-equipped transistorProduct specification 1998 Nov 25Supersedes data of 1997 Dec 15Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA123JEFEATURES Built-in bias resistors R1 and R2(typ. 2.2 k and 47 krespectively)handbook, halfpage33 Simplification of circuit d

 6.7. Size:56K  philips
pdta123jt 1.pdf

PDTA123JM
PDTA123JM

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTA123JTPNP resistor-equipped transistor1999 May 27Product specificationPhilips Semiconductors Product specificationPNP resistor-equipped transistor PDTA123JTFEATURES Built-in bias resistors (typ 2.2 kand 47 k respectively)3handbook, 4 columns Simplification of circuit design3 Reduces number

 6.8. Size:2790K  nxp
pdta143xqa pdta123jqa pdta143zqa pdta114yqa.pdf

PDTA123JM
PDTA123JM

PDTA143X/123J/143Z/114YQA series50 V, 100 mA PNP resistor-equipped transistorsRev. 1 30 October 2015 Product data sheet1. Product profile1.1 General description100 mA PNP Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.Table 1. Product overviewType

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
Back to Top