PDTA124XE Datasheet, Equivalent, Cross Reference Search
Type Designator: PDTA124XE
SMD Transistor Code: 31
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 22 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.47
Maximum Collector Power Dissipation (Pc): 0.15
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 7
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Collector Capacitance (Cc): 3
pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SOT416
PDTA124XE Transistor Equivalent Substitute - Cross-Reference Search
PDTA124XE Datasheet (PDF)
pdta124xe 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA124XEPNP resistor-equipped transistorProduct specification 1999 May 21Supersedes data of 1998 Nov 25Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA124XEFEATURES Built-in bias resistors R1 and R2 (typ. 22 k and 47 krespectively) Simplification of circuit design Reduces number of
pdta124xe 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA124XEPNP resistor-equipped transistorProduct specification 1999 May 21Supersedes data of 1998 Nov 25Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA124XEFEATURES Built-in bias resistors R1 and R2 (typ. 22 k and 47 krespectively) Simplification of circuit design Reduces number of
pdta124xef 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTA124XEFPNP resistor-equipped transistor1999 May 25Preliminary specificationSupersedes data of 1998 Nov 16Philips Semiconductors Preliminary specificationPNP resistor-equipped transistor PDTA124XEFFEATURES PINNING Power dissipation comparable to SOT23PIN DESCRIPTION Built-in bias resistors R1 and R2 (typ. 22 k and 47 k
pdta124xef 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTA124XEFPNP resistor-equipped transistor1999 May 25Preliminary specificationSupersedes data of 1998 Nov 16Philips Semiconductors Preliminary specificationPNP resistor-equipped transistor PDTA124XEFFEATURES PINNING Power dissipation comparable to SOT23PIN DESCRIPTION Built-in bias resistors R1 and R2 (typ. 22 k and 47 k
pdta124xef pdta124xk pdta124xs.pdf
PDTA124X seriesPNP resistor-equipped transistors; R1 = 22 k, R2 = 47 kRev. 08 3 September 2009 Product data sheet1. Product profile1.1 General descriptionPNP Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package NPN complementNXP JEITA JEDECPDTA124XE SOT416 SC-75 - PDTC124XEPDTA124XEF SOT490 SC-89 - PDTC124XEFPDTA124XK SOT346 SC-
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
