All Transistors. PDTA124XE Datasheet

 

PDTA124XE Datasheet and Replacement


   Type Designator: PDTA124XE
   SMD Transistor Code: 31
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 22 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 0.47
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SOT416
 

 PDTA124XE Substitution

   - BJT ⓘ Cross-Reference Search

   

PDTA124XE Datasheet (PDF)

 ..1. Size:55K  motorola
pdta124xe 3.pdf pdf_icon

PDTA124XE

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA124XEPNP resistor-equipped transistorProduct specification 1999 May 21Supersedes data of 1998 Nov 25Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA124XEFEATURES Built-in bias resistors R1 and R2 (typ. 22 k and 47 krespectively) Simplification of circuit design Reduces number of

 ..2. Size:55K  philips
pdta124xe 3.pdf pdf_icon

PDTA124XE

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA124XEPNP resistor-equipped transistorProduct specification 1999 May 21Supersedes data of 1998 Nov 25Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA124XEFEATURES Built-in bias resistors R1 and R2 (typ. 22 k and 47 krespectively) Simplification of circuit design Reduces number of

 0.1. Size:54K  motorola
pdta124xef 2.pdf pdf_icon

PDTA124XE

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTA124XEFPNP resistor-equipped transistor1999 May 25Preliminary specificationSupersedes data of 1998 Nov 16Philips Semiconductors Preliminary specificationPNP resistor-equipped transistor PDTA124XEFFEATURES PINNING Power dissipation comparable to SOT23PIN DESCRIPTION Built-in bias resistors R1 and R2 (typ. 22 k and 47 k

 0.2. Size:54K  philips
pdta124xef 2.pdf pdf_icon

PDTA124XE

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTA124XEFPNP resistor-equipped transistor1999 May 25Preliminary specificationSupersedes data of 1998 Nov 16Philips Semiconductors Preliminary specificationPNP resistor-equipped transistor PDTA124XEFFEATURES PINNING Power dissipation comparable to SOT23PIN DESCRIPTION Built-in bias resistors R1 and R2 (typ. 22 k and 47 k

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: NA31L | BF491K | 2SA535 | 2N5666SMD05 | BC129 | NB011E | ASZ20

Keywords - PDTA124XE transistor datasheet

 PDTA124XE cross reference
 PDTA124XE equivalent finder
 PDTA124XE lookup
 PDTA124XE substitution
 PDTA124XE replacement

 

 
Back to Top

 


 
.