All Transistors. PDTC123TT Datasheet

 

PDTC123TT Datasheet and Replacement


   Type Designator: PDTC123TT
   SMD Transistor Code: pZM_tZM_WZM_-ZM_ZM*
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 2.2 kOhm
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 2.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SOT23
 

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PDTC123TT Datasheet (PDF)

 6.1. Size:78K  philips
pdtc123tk pdtc123ts pdtc123t ser.pdf pdf_icon

PDTC123TT

PDTC123T seriesNPN resistor-equipped transistors; R1 = 2.2 k, R2 = openRev. 01 10 March 2006 Product data sheet1. Product profile1.1 General descriptionNPN Resistor-Equipped Transistors (RET) family in Surface Mounted Device (SMD)plastic packages.Table 1. Product overviewType number Package PNP complementPhilips JEITA JEDECPDTC123TE SOT416 SC-75 - PDTA123TEPDTC123TK

 7.1. Size:54K  motorola
pdtc123jef 1.pdf pdf_icon

PDTC123TT

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC123JEFNPN resistor-equipped transistor1999 May 27Preliminary specificationPhilips Semiconductors Preliminary specificationNPN resistor-equipped transistor PDTC123JEFFEATURES Built-in bias resistors R1 and R2(typ. 2.2 k and 47 krespectively)3handbook, halfpage3 Simplification of circuit designR11 Red

 7.2. Size:55K  motorola
pdtc123je 3.pdf pdf_icon

PDTC123TT

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC123JENPN resistor-equipped transistor1999 May 21Product specificationSupersedes data of 1998 Aug 03Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC123JEFEATURES Built-in bias resistors R1 and R2 (typ. 2.2 and 47 krespectively) Simplification of circuit designhandbook, halfpage33

 7.3. Size:56K  motorola
pdtc123jt 3.pdf pdf_icon

PDTC123TT

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC123JTNPN resistor-equipped transistor1999 May 18Product specificationSupersedes data of 1998 May 08Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC123JTFEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 krespectively) Simplification of circuit design

Datasheet: PDTC123ET , PDTC123EU , PDTC123JE , PDTC123JM , PDTC123JT , PDTC123JU , PDTC123TE , PDTC123TM , 2SA1943 , PDTC123TU , PDTC123YE , PDTC123YM , PDTC123YT , PDTC123YU , PDTC124EE , PDTC124EM , PDTC124ET .

History: BU508DW | KSB1366G | 2SD376A | MJB44H11T4-A | JE9215C | 2SC5296 | KSB1149

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