PDTC124EE Datasheet. Specs and Replacement

Type Designator: PDTC124EE  📄📄 

SMD Transistor Code: 6

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 22 kOhm

Built in Bias Resistor R2 = 22 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 2.5 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: SOT416

 PDTC124EE Substitution

- BJT ⓘ Cross-Reference Search

 

PDTC124EE datasheet

 ..1. Size:57K  motorola

pdtc124ee 2.pdf pdf_icon

PDTC124EE

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC124EE NPN resistor-equipped transistor 1998 Jul 31 Product specification Supersedes data of 1997 Jul 11 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124EE FEATURES Built-in bias resistors R1 and R2 (typ. 22 k each) Simplification of circuit design... See More ⇒

 ..2. Size:57K  philips

pdtc124ee 2.pdf pdf_icon

PDTC124EE

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC124EE NPN resistor-equipped transistor 1998 Jul 31 Product specification Supersedes data of 1997 Jul 11 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124EE FEATURES Built-in bias resistors R1 and R2 (typ. 22 k each) Simplification of circuit design... See More ⇒

 6.1. Size:56K  motorola

pdtc124et 5.pdf pdf_icon

PDTC124EE

DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PDTC124ET NPN resistor-equipped transistor 1999 Apr 16 Product specification Supersedes data of 1998 May 08 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124ET FEATURES Built-in bias resistors R1 and R2 (typ. 22 k each) 3 handbook, 4 columns Simplification of circuit design 3... See More ⇒

 6.2. Size:58K  motorola

pdtc124es 2.pdf pdf_icon

PDTC124EE

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PDTC124ES NPN resistor-equipped transistor 1998 May 08 Product specification Supersedes data of 1997 Jul 03 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124ES FEATURES Built-in bias resistors R1 and R2 (typ. 22 k each) Simplification o... See More ⇒

Detailed specifications: PDTC123TE, PDTC123TM, PDTC123TT, PDTC123TU, PDTC123YE, PDTC123YM, PDTC123YT, PDTC123YU, BC557, PDTC124EM, PDTC124ET, PDTC124EU, PDTC124TE, PDTC124TM, PDTC124TT, PDTC124TU, PDTC124XE

Keywords - PDTC124EE pdf specs

 PDTC124EE cross reference

 PDTC124EE equivalent finder

 PDTC124EE pdf lookup

 PDTC124EE substitution

 PDTC124EE replacement