PDTC124EE Datasheet. Specs and Replacement
Type Designator: PDTC124EE 📄📄
SMD Transistor Code: 6
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 22 kOhm
Built in Bias Resistor R2 = 22 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Collector Capacitance (Cc): 2.5 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: SOT416
PDTC124EE Substitution
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PDTC124EE datasheet
DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC124EE NPN resistor-equipped transistor 1998 Jul 31 Product specification Supersedes data of 1997 Jul 11 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124EE FEATURES Built-in bias resistors R1 and R2 (typ. 22 k each) Simplification of circuit design... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC124EE NPN resistor-equipped transistor 1998 Jul 31 Product specification Supersedes data of 1997 Jul 11 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124EE FEATURES Built-in bias resistors R1 and R2 (typ. 22 k each) Simplification of circuit design... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PDTC124ET NPN resistor-equipped transistor 1999 Apr 16 Product specification Supersedes data of 1998 May 08 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124ET FEATURES Built-in bias resistors R1 and R2 (typ. 22 k each) 3 handbook, 4 columns Simplification of circuit design 3... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PDTC124ES NPN resistor-equipped transistor 1998 May 08 Product specification Supersedes data of 1997 Jul 03 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124ES FEATURES Built-in bias resistors R1 and R2 (typ. 22 k each) Simplification o... See More ⇒
Detailed specifications: PDTC123TE, PDTC123TM, PDTC123TT, PDTC123TU, PDTC123YE, PDTC123YM, PDTC123YT, PDTC123YU, BC557, PDTC124EM, PDTC124ET, PDTC124EU, PDTC124TE, PDTC124TM, PDTC124TT, PDTC124TU, PDTC124XE
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