PDTC124XT Datasheet PDF and Replacements, Transistor Equivalent Finder, Cross Reference

PDTC124XT Datasheet. Specs and Replacement

Type Designator: PDTC124XT 📄📄

SMD Transistor Code: -46_*46_p46_t46_W46

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 22 kOhm

Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.47

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.25 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 2.5 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: SOT23

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PDTC124XT datasheet

6.1. Size:54K motorola

pdtc124xef 2.pdf pdf_icon

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC124XEF NPN resistor-equipped transistor 1999 May 18 Preliminary specification Supersedes data of 1998 Nov 11 Philips Semiconductors Preliminary specification NPN resistor-equipped transistor PDTC124XEF FEATURES Power dissipation comparable to SOT23 Built-in bias resistors R1 and R2 (typ. 22 k and 47 k respectively) 3 ha... See More ⇒

6.2. Size:55K motorola

pdtc124xe 3.pdf pdf_icon

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC124XE NPN resistor-equipped transistor 1999 May 18 Product specification Supersedes data of 1998 Sep 21 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124XE FEATURES Built-in bias resistors R1 and R2 (typ. 22 k and 47 k respectively) Simplification of circuit design handbook, halfpage ... See More ⇒

6.3. Size:54K philips

pdtc124xef 2.pdf pdf_icon