PDTC144ET Datasheet, Equivalent, Cross Reference Search
Type Designator: PDTC144ET
SMD Transistor Code: *08_p08_t08_W08
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.25
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 10
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Collector Capacitance (Cc): 2.5
pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SOT23
PDTC144ET Transistor Equivalent Substitute - Cross-Reference Search
PDTC144ET Datasheet (PDF)
pdtc144et 5.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC144ETNPN resistor-equipped transistor1999 Apr 16Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC144ETFEATURES Built-in bias resistors R1 and R2(typ. 47 k each)3handbook, 4 columns Simplification of circuit design
pdtc144et 5.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC144ETNPN resistor-equipped transistor1999 Apr 16Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC144ETFEATURES Built-in bias resistors R1 and R2(typ. 47 k each)3handbook, 4 columns Simplification of circuit design
pdtc144eef 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC144EEFNPN resistor-equipped transistor1999 May 27Preliminary specificationPhilips Semiconductors Preliminary specificationNPN resistor-equipped transistor PDTC144EEFFEATURES Built-in bias resistors R1 and R2(typ. 47 k each) Simplification of circuit design 3handbook, halfpage3R1 Reduces number of components
pdtc144eu 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC144EUNPN resistor-equipped transistor1999 Apr 16Objective specificationSupersedes data of 1998 May 18Philips Semiconductors Objective specificationNPN resistor-equipped transistor PDTC144EUFEATURES Built-in bias resistors R1 and R2(typ. 47 k each)3handbook, 4 columns Simplification of circuit desi
pdtc144es 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTC144ESNPN resistor-equipped transistor1998 May 19Product specificationSupersedes data of 1997 Jul 01File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC144ESFEATURES Built-in bias resistors R1 and R2(typ. 47 k each) Simplification o
pdtc144ek 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTC144EKNPN resistor-equipped transistor1998 May 19Objective specificationSupersedes data of 1997 Jul 14File under Discrete Semiconductors, SC04Philips Semiconductors Objective specificationNPN resistor-equipped transistor PDTC144EKFEATURES Built-in bias resistors R1 and R2(typ. 47 k each)3ndbook, 4 col
pdtc144ee 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC144EENPN resistor-equipped transistor1998 Jul 16Product specificationSupersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC144EEFEATURES Built-in bias resistors R1 and R2(typ. 47 k each) Simplification of circuit design
pdtc144eef 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC144EEFNPN resistor-equipped transistor1999 May 27Preliminary specificationPhilips Semiconductors Preliminary specificationNPN resistor-equipped transistor PDTC144EEFFEATURES Built-in bias resistors R1 and R2(typ. 47 k each) Simplification of circuit design 3handbook, halfpage3R1 Reduces number of components
pdtc144eu 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC144EUNPN resistor-equipped transistor1999 Apr 16Objective specificationSupersedes data of 1998 May 18Philips Semiconductors Objective specificationNPN resistor-equipped transistor PDTC144EUFEATURES Built-in bias resistors R1 and R2(typ. 47 k each)3handbook, 4 columns Simplification of circuit desi
pdtc144es 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTC144ESNPN resistor-equipped transistor1998 May 19Product specificationSupersedes data of 1997 Jul 01File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC144ESFEATURES Built-in bias resistors R1 and R2(typ. 47 k each) Simplification o
pdtc144e series.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPDTC144E seriesNPN resistor-equipped transistors; R1 = 47 k, R2 = 47 kProduct data sheet 2004 Aug 17Supersedes data of 2004 Mar 23NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC144E seriesR1 = 47 k, R2 = 47 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT
pdtc144ek 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTC144EKNPN resistor-equipped transistor1998 May 19Objective specificationSupersedes data of 1997 Jul 14File under Discrete Semiconductors, SC04Philips Semiconductors Objective specificationNPN resistor-equipped transistor PDTC144EKFEATURES Built-in bias resistors R1 and R2(typ. 47 k each)3ndbook, 4 col
pdtc144ee 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC144EENPN resistor-equipped transistor1998 Jul 16Product specificationSupersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC144EEFEATURES Built-in bias resistors R1 and R2(typ. 47 k each) Simplification of circuit design
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , BD777 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
