Биполярный транзистор PDTC144ET - описание производителя. Основные параметры. Даташиты.
Наименование производителя: PDTC144ET
Маркировка: *08_p08_t08_W08
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 47 kOhm
Встроенный резистор цепи смещения R2 = 47 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Ёмкость коллекторного перехода (Cc): 2.5 pf
Статический коэффициент передачи тока (hfe): 80
Корпус транзистора: SOT23
Аналоги (замена) для PDTC144ET
PDTC144ET Datasheet (PDF)
pdtc144et 5.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC144ETNPN resistor-equipped transistor1999 Apr 16Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC144ETFEATURES Built-in bias resistors R1 and R2(typ. 47 k each)3handbook, 4 columns Simplification of circuit design
pdtc144et 5.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC144ETNPN resistor-equipped transistor1999 Apr 16Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC144ETFEATURES Built-in bias resistors R1 and R2(typ. 47 k each)3handbook, 4 columns Simplification of circuit design
pdtc144eef 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC144EEFNPN resistor-equipped transistor1999 May 27Preliminary specificationPhilips Semiconductors Preliminary specificationNPN resistor-equipped transistor PDTC144EEFFEATURES Built-in bias resistors R1 and R2(typ. 47 k each) Simplification of circuit design 3handbook, halfpage3R1 Reduces number of components
pdtc144eu 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC144EUNPN resistor-equipped transistor1999 Apr 16Objective specificationSupersedes data of 1998 May 18Philips Semiconductors Objective specificationNPN resistor-equipped transistor PDTC144EUFEATURES Built-in bias resistors R1 and R2(typ. 47 k each)3handbook, 4 columns Simplification of circuit desi
pdtc144es 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTC144ESNPN resistor-equipped transistor1998 May 19Product specificationSupersedes data of 1997 Jul 01File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC144ESFEATURES Built-in bias resistors R1 and R2(typ. 47 k each) Simplification o
pdtc144ek 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTC144EKNPN resistor-equipped transistor1998 May 19Objective specificationSupersedes data of 1997 Jul 14File under Discrete Semiconductors, SC04Philips Semiconductors Objective specificationNPN resistor-equipped transistor PDTC144EKFEATURES Built-in bias resistors R1 and R2(typ. 47 k each)3ndbook, 4 col
pdtc144ee 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC144EENPN resistor-equipped transistor1998 Jul 16Product specificationSupersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC144EEFEATURES Built-in bias resistors R1 and R2(typ. 47 k each) Simplification of circuit design
pdtc144eef 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC144EEFNPN resistor-equipped transistor1999 May 27Preliminary specificationPhilips Semiconductors Preliminary specificationNPN resistor-equipped transistor PDTC144EEFFEATURES Built-in bias resistors R1 and R2(typ. 47 k each) Simplification of circuit design 3handbook, halfpage3R1 Reduces number of components
pdtc144eu 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC144EUNPN resistor-equipped transistor1999 Apr 16Objective specificationSupersedes data of 1998 May 18Philips Semiconductors Objective specificationNPN resistor-equipped transistor PDTC144EUFEATURES Built-in bias resistors R1 and R2(typ. 47 k each)3handbook, 4 columns Simplification of circuit desi
pdtc144es 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTC144ESNPN resistor-equipped transistor1998 May 19Product specificationSupersedes data of 1997 Jul 01File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC144ESFEATURES Built-in bias resistors R1 and R2(typ. 47 k each) Simplification o
pdtc144e series.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPDTC144E seriesNPN resistor-equipped transistors; R1 = 47 k, R2 = 47 kProduct data sheet 2004 Aug 17Supersedes data of 2004 Mar 23NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC144E seriesR1 = 47 k, R2 = 47 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT
pdtc144ek 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTC144EKNPN resistor-equipped transistor1998 May 19Objective specificationSupersedes data of 1997 Jul 14File under Discrete Semiconductors, SC04Philips Semiconductors Objective specificationNPN resistor-equipped transistor PDTC144EKFEATURES Built-in bias resistors R1 and R2(typ. 47 k each)3ndbook, 4 col
pdtc144ee 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC144EENPN resistor-equipped transistor1998 Jul 16Product specificationSupersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC144EEFEATURES Built-in bias resistors R1 and R2(typ. 47 k each) Simplification of circuit design
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