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2N5659 Specs and Replacement

Type Designator: 2N5659

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 30 MHz

Collector Capacitance (Cc): 150 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO59

 2N5659 Substitution

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2N5659 datasheet

 ..1. Size:94K  ssdi

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2N5659

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 9.1. Size:176K  motorola

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2N5659

Order this document MOTOROLA by 2N5655/D SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 Plastic NPN Silicon 2N5657 High-Voltage Power Transistor . . . designed for use in line operated equipment such as audio output amplifiers; low current, high voltage converters; and AC line relays. 0.5 AMPERE POWER TRANSISTORS Excellent DC Current Gain hFE = 30 250 @ IC = 100 mAdc NP... See More ⇒

 9.2. Size:497K  st

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2N5659

2N5657 SILICON NPN TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The 2N5657 is a silicon epitaxial-base NPN transistor in Jedec SOT-32 plastic package. It is intended for use output amplifiers, low current, high voltage converters and AC line relays. 1 2 3 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Un... See More ⇒

 9.3. Size:44K  njs

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2N5659

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Detailed specifications: 2N565 , 2N5650 , 2N5651 , 2N5652 , 2N5655 , 2N5656 , 2N5657 , 2N5658 , 2SC945 , 2N566 , 2N5660 , 2N5661 , 2N5662 , 2N5663 , 2N5664 , 2N5664SM , 2N5665 .

History: BDX68A | BDY60B

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