All Transistors. 2N5659 Datasheet

 

2N5659 Datasheet and Replacement


   Type Designator: 2N5659
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 30 MHz
   Collector Capacitance (Cc): 150 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO59
 

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2N5659 Datasheet (PDF)

 ..1. Size:94K  ssdi
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2N5659

 9.1. Size:176K  motorola
2n5655-57 2n5655 2n5656 2n5657.pdf pdf_icon

2N5659

Order this documentMOTOROLAby 2N5655/DSEMICONDUCTOR TECHNICAL DATA2N56552N5656Plastic NPN Silicon2N5657High-Voltage Power Transistor. . . designed for use in lineoperated equipment such as audio output amplifiers;lowcurrent, highvoltage converters; and AC line relays. 0.5 AMPEREPOWER TRANSISTORS Excellent DC Current Gain hFE = 30250 @ IC = 100 mAdcNP

 9.2. Size:497K  st
2n5657.pdf pdf_icon

2N5659

2N5657SILICON NPN TRANSISTOR STMicroelectronics PREFERREDSALESTYPE NPN TRANSISTOR DESCRIPTION The 2N5657 is a silicon epitaxial-base NPNtransistor in Jedec SOT-32 plastic package. It isintended for use output amplifiers, low current,high voltage converters and AC line relays.123SOT-32INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Un

 9.3. Size:44K  njs
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2N5659

Datasheet: 2N565 , 2N5650 , 2N5651 , 2N5652 , 2N5655 , 2N5656 , 2N5657 , 2N5658 , 2SC2655 , 2N566 , 2N5660 , 2N5661 , 2N5662 , 2N5663 , 2N5664 , 2N5664SM , 2N5665 .

History: KTC4793 | BUX41N | TK3906NND03 | BC312

Keywords - 2N5659 transistor datasheet

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