All Transistors. 2N5665SM Datasheet

 

2N5665SM Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2N5665SM
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 400 V
   Maximum Collector-Emitter Voltage |Vce|: 300 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 520 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO252

 2N5665SM Transistor Equivalent Substitute - Cross-Reference Search

   

2N5665SM Datasheet (PDF)

 0.1. Size:10K  semelab
2n5665smd.pdf

2N5665SM

2N5665SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 300V IC = 3A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (

 8.1. Size:341K  semelab
2n5665n1.pdf

2N5665SM
2N5665SM

NPN POWER SILICON SWITCHING TRANSISTOR 2N5665N1 Hermetic SMD0.5 Ceramic Surface Mount. Ideally Suited for Power Amplifier and Switching Applications. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VCBO Collector Base Voltage 400V VCEO Collector Emitter Voltage 300V VEBO Emitter Base Voltage 6V IC Cont

 8.2. Size:127K  inchange semiconductor
2n5664 2n5665.pdf

2N5665SM
2N5665SM

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5664 2N5665 DESCRIPTION With TO-66 package High breakdown voltage APPLICATIONS High speed switching and linear amplifier High-voltage operational amplifiers Switching regulators ,converters Deflection stages and high fidelity amplifers PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 Em

 8.3. Size:221K  inchange semiconductor
2n5665.pdf

2N5665SM
2N5665SM

isc Silicon NPN Power Transistor 2N5665DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =300V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage 400 VCBOV Collector-Emitter Voltage 30

Datasheet: 2N566 , 2N5660 , 2N5661 , 2N5662 , 2N5663 , 2N5664 , 2N5664SM , 2N5665 , S9013 , 2N5666 , 2N5666SM , 2N5667 , 2N567 , 2N5671 , 2N5672 , 2N5675 , 2N5676 .

 

 
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