All Transistors. PUMD6 Datasheet

 

PUMD6 Datasheet and Replacement


   Type Designator: PUMD6
   SMD Transistor Code: D*6
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN*PNP
   Built in Bias Resistor R1 = 4.7 kOhm
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SOT363
 

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PUMD6 Datasheet (PDF)

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PUMD6

DISCRETE SEMICONDUCTORSDATA SHEETndbook, halfpageMBD128PUMD6NPN/PNP resistor-equippedtransistor1999 May 28Product specificationSupersedes data of 1997 Dec 15Philips Semiconductors Product specificationNPN/PNP resistor-equipped transistor PUMD6FEATURES Transistors with different polarity, each with a built-inbias resistor R1 (typ. 4.7 k)6 5 4handbook, halfp

 ..2. Size:272K  philips
 pemd6 pumd6.pdf pdf_icon

PUMD6

DISCRETE SEMICONDUCTORS DATA SHEETPEMD6; PUMD6NPN/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = openProduct data sheet 2004 Apr 07Supersedes data of 2003 Nov 04NXP Semiconductors Product data sheetNPN/PNP resistor-equipped transistors; PEMD6; PUMD6R1 = 4.7 k, R2 = openFEATURES DESCRIPTION Built-in bias resistors NPN/PNP resistor-equipped transistors (see

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PUMD6

SMD Type TransistorsNPN/PNP Resistor-Equipped TransistorsPUMD6 SOT323-6 (SOT363) Features4 Built-in bias resistors Simplified circuit design5 Reduction of component count 3 Reduced pick and place costs.1.Emitter NPN26 2.Base NPN3.Collector PNP 4.Emitter PNP1PNP34 5.Base PNPTop view6.Collector NPNR1R15 261NPN Absolute

Datasheet: PUMD19 , PUMD2 , PUMD20 , PUMD24 , PUMD3 , PUMD30 , PUMD4 , PUMD48 , 2SA1943 , PUMD9 , PUMF11 , PUMF12 , PUMH1 , PUMH10 , PUMH11 , PUMH13 , PUMH14 .

History: GSTU8045I | BC238B | 2SB1274Q | 2SA1606E | BC212LB | PXT8550-C | BC297-7

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