All Transistors. PUMD6 Datasheet

 

PUMD6 Datasheet and Replacement


   Type Designator: PUMD6
   SMD Transistor Code: D*6
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN*PNP
   Built in Bias Resistor R1 = 4.7 kOhm
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SOT363
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PUMD6 Datasheet (PDF)

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PUMD6

DISCRETE SEMICONDUCTORSDATA SHEETndbook, halfpageMBD128PUMD6NPN/PNP resistor-equippedtransistor1999 May 28Product specificationSupersedes data of 1997 Dec 15Philips Semiconductors Product specificationNPN/PNP resistor-equipped transistor PUMD6FEATURES Transistors with different polarity, each with a built-inbias resistor R1 (typ. 4.7 k)6 5 4handbook, halfp

 ..2. Size:272K  philips
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PUMD6

DISCRETE SEMICONDUCTORS DATA SHEETPEMD6; PUMD6NPN/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = openProduct data sheet 2004 Apr 07Supersedes data of 2003 Nov 04NXP Semiconductors Product data sheetNPN/PNP resistor-equipped transistors; PEMD6; PUMD6R1 = 4.7 k, R2 = openFEATURES DESCRIPTION Built-in bias resistors NPN/PNP resistor-equipped transistors (see

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 pumd6.pdf pdf_icon

PUMD6

SMD Type TransistorsNPN/PNP Resistor-Equipped TransistorsPUMD6 SOT323-6 (SOT363) Features4 Built-in bias resistors Simplified circuit design5 Reduction of component count 3 Reduced pick and place costs.1.Emitter NPN26 2.Base NPN3.Collector PNP 4.Emitter PNP1PNP34 5.Base PNPTop view6.Collector NPNR1R15 261NPN Absolute

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: TI413 | KRA741U | D60T5050 | 3DD13007_Z8 | 2SC1985 | D32K1 | ZXTP2012Z

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