PUMD6 Datasheet, Equivalent, Cross Reference Search
Type Designator: PUMD6
SMD Transistor Code: D*6
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 4.7 kOhm
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: SOT363
PUMD6 Transistor Equivalent Substitute - Cross-Reference Search
PUMD6 Datasheet (PDF)
pumd6 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETndbook, halfpageMBD128PUMD6NPN/PNP resistor-equippedtransistor1999 May 28Product specificationSupersedes data of 1997 Dec 15Philips Semiconductors Product specificationNPN/PNP resistor-equipped transistor PUMD6FEATURES Transistors with different polarity, each with a built-inbias resistor R1 (typ. 4.7 k)6 5 4handbook, halfp
pemd6 pumd6.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPEMD6; PUMD6NPN/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = openProduct data sheet 2004 Apr 07Supersedes data of 2003 Nov 04NXP Semiconductors Product data sheetNPN/PNP resistor-equipped transistors; PEMD6; PUMD6R1 = 4.7 k, R2 = openFEATURES DESCRIPTION Built-in bias resistors NPN/PNP resistor-equipped transistors (see
pumd6.pdf
SMD Type TransistorsNPN/PNP Resistor-Equipped TransistorsPUMD6 SOT323-6 (SOT363) Features4 Built-in bias resistors Simplified circuit design5 Reduction of component count 3 Reduced pick and place costs.1.Emitter NPN26 2.Base NPN3.Collector PNP 4.Emitter PNP1PNP34 5.Base PNPTop view6.Collector NPNR1R15 261NPN Absolute
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
