PUMH4 Datasheet, Equivalent, Cross Reference Search
Type Designator: PUMH4
SMD Transistor Code: H*4
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 10 kOhm
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 2.5 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: SOT363
PUMH4 Transistor Equivalent Substitute - Cross-Reference Search
PUMH4 Datasheet (PDF)
pumh4 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETndbook, halfpageMBD128PUMH4NPN resistor-equipped doubletransistorProduct specification 1999 May 20Supersedes data of 1998 Aug 10Philips Semiconductors Product specificationNPN resistor-equipped double transistor PUMH4FEATURES Transistors with built-in bias resistor R1(typ. 10 k)6 5 4handbook, halfpage No mutual interfere
pemh4 pumh4.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPEMH4; PUMH4NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = openProduct data sheet 2004 Apr 14Supersedes data of 2003 Oct 02NXP Semiconductors Product data sheetNPN/NPN resistor-equipped transistors; PEMH4; PUMH4R1 = 10 k, R2 = openFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
