PUMH7 Datasheet, Equivalent, Cross Reference Search
Type Designator: PUMH7
SMD Transistor Code: H*7
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 4.7 kOhm
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 2.5 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: SOT363
PUMH7 Transistor Equivalent Substitute - Cross-Reference Search
PUMH7 Datasheet (PDF)
pemh7 pumh7.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPEMH7; PUMH7NPN/NPN resistor-equipped transistors; R1 = 4.7 k, R2 = openProduct data sheet 2003 Oct 02Supersedes data of 2001 Oct 22NXP Semiconductors Product data sheetNPN/NPN resistor-equipped transistors; PEMH7; PUMH7R1 = 4.7 k, R2 = openFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT
pumh7 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETndbook, halfpageMBD128PUMH7NPN resistor-equipped doubletransistorProduct specification 1999 Apr 22Supersedes data of 1998 Jun 29Philips Semiconductors Product specificationNPN resistor-equipped double transistor PUMH7FEATURES6 5 4handbook, halfpage Transistors with built-in biasresistor R1 (typ. 4.7 k)6 5 4 No mutual i
pemh7 pumh7.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPEMH7; PUMH7NPN/NPN resistor-equipped transistors; R1 = 4.7 k, R2 = openProduct data sheet 2003 Oct 02Supersedes data of 2001 Oct 22NXP Semiconductors Product data sheetNPN/NPN resistor-equipped transistors; PEMH7; PUMH7R1 = 4.7 k, R2 = openFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
