2STC4467 Specs and Replacement
Type Designator: 2STC4467
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN: 70
Package: TO3P
2STC4467 Substitution
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2STC4467 datasheet
2STC4467 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage VCEO = 120 V Complementary to 2STA1694 Fast-switching speed Typical ft = 20 MHz Fully characterized at 125 oC 3 2 1 Applications TO-3P Audio power amplifier Description Figure 1. Internal schematic diagram The device is a NPN transistor manufactured using new BiT... See More ⇒
2STC4468 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage VCEO = 140 V Complementary to 2STA1695 Typical ft = 20 MHz Fully characterized at 125 oC 3 Application 2 1 Audio power amplifier TO-3P Description Figure 1. Internal schematic diagram The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for... See More ⇒
2STC4793 NPN power bipolar transistor Preliminary data Features High breakdown voltage VCEO = 230 V Complementary to 2STA1837 High transition frequency, typical fT = 100 MHz Applications Audio power amplifier 3 2 Drive stage amplifier 1 TO-220FP Description This device is a NPN transistor manufactured using new PB-HDC (power bipolar high density Figu... See More ⇒
Detailed specifications: 2STA1694 , 2STA1695 , 2STA1943 , 2STA1962 , 2STA2120 , 2STA2121 , 2STA2510 , 2STC2510 , 2SC2655 , 2STC4468 , 2STC5200 , 2STC5242 , 2STC5949 , 2STD1665 , 2STF1340 , 2STF1360 , 2STF1550 .
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