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2STC4467 Specs and Replacement

Type Designator: 2STC4467

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 80 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 20 MHz

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: TO3P

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2STC4467 datasheet

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2stc4467.pdf pdf_icon

2STC4467

2STC4467 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage VCEO = 120 V Complementary to 2STA1694 Fast-switching speed Typical ft = 20 MHz Fully characterized at 125 oC 3 2 1 Applications TO-3P Audio power amplifier Description Figure 1. Internal schematic diagram The device is a NPN transistor manufactured using new BiT... See More ⇒

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2stc4468.pdf pdf_icon

2STC4467

2STC4468 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage VCEO = 140 V Complementary to 2STA1695 Typical ft = 20 MHz Fully characterized at 125 oC 3 Application 2 1 Audio power amplifier TO-3P Description Figure 1. Internal schematic diagram The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for... See More ⇒

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2stc4793.pdf pdf_icon

2STC4467

2STC4793 NPN power bipolar transistor Preliminary data Features High breakdown voltage VCEO = 230 V Complementary to 2STA1837 High transition frequency, typical fT = 100 MHz Applications Audio power amplifier 3 2 Drive stage amplifier 1 TO-220FP Description This device is a NPN transistor manufactured using new PB-HDC (power bipolar high density Figu... See More ⇒

Detailed specifications: 2STA1694 , 2STA1695 , 2STA1943 , 2STA1962 , 2STA2120 , 2STA2121 , 2STA2510 , 2STC2510 , 2SC2655 , 2STC4468 , 2STC5200 , 2STC5242 , 2STC5949 , 2STD1665 , 2STF1340 , 2STF1360 , 2STF1550 .

History: 2SAR572D

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