2STC4467 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2STC4467
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO3P
2STC4467 Transistor Equivalent Substitute - Cross-Reference Search
2STC4467 Datasheet (PDF)
2stc4467.pdf
2STC4467High power NPN epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = 120 V Complementary to 2STA1694 Fast-switching speed Typical ft = 20 MHz Fully characterized at 125 oC321ApplicationsTO-3P Audio power amplifierDescriptionFigure 1. Internal schematic diagramThe device is a NPN transistor manufactured using new BiT
2stc4468.pdf
2STC4468High power NPN epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = 140 V Complementary to 2STA1695 Typical ft = 20 MHz Fully characterized at 125 oC3Application21 Audio power amplifierTO-3PDescriptionFigure 1. Internal schematic diagramThe device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for
2stc4793.pdf
2STC4793NPN power bipolar transistorPreliminary dataFeatures High breakdown voltage VCEO = 230 V Complementary to 2STA1837 High transition frequency, typical fT = 100 MHzApplications Audio power amplifier32 Drive stage amplifier1TO-220FPDescriptionThis device is a NPN transistor manufactured using new PB-HDC (power bipolar high density Figu
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
