2STC4467 Todos los transistores

 

2STC4467 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2STC4467
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 80 W
   Tensión colector-base (Vcb): 120 V
   Tensión colector-emisor (Vce): 120 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 20 MHz
   Ganancia de corriente contínua (hfe): 70
   Paquete / Cubierta: TO3P
 

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2STC4467 Datasheet (PDF)

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 2stc4467.pdf pdf_icon

2STC4467

2STC4467High power NPN epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = 120 V Complementary to 2STA1694 Fast-switching speed Typical ft = 20 MHz Fully characterized at 125 oC321ApplicationsTO-3P Audio power amplifierDescriptionFigure 1. Internal schematic diagramThe device is a NPN transistor manufactured using new BiT

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2STC4467

2STC4468High power NPN epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = 140 V Complementary to 2STA1695 Typical ft = 20 MHz Fully characterized at 125 oC3Application21 Audio power amplifierTO-3PDescriptionFigure 1. Internal schematic diagramThe device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for

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 2stc4793.pdf pdf_icon

2STC4467

2STC4793NPN power bipolar transistorPreliminary dataFeatures High breakdown voltage VCEO = 230 V Complementary to 2STA1837 High transition frequency, typical fT = 100 MHzApplications Audio power amplifier32 Drive stage amplifier1TO-220FPDescriptionThis device is a NPN transistor manufactured using new PB-HDC (power bipolar high density Figu

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BD433-25 | BD940 | 40316

 

 
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