2STC4467 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2STC4467  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 80 W

Tensión colector-base (Vcb): 120 V

Tensión colector-emisor (Vce): 120 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 20 MHz

Ganancia de corriente contínua (hFE): 70

Encapsulados: TO3P

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2STC4467 datasheet

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2STC4467

2STC4467 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage VCEO = 120 V Complementary to 2STA1694 Fast-switching speed Typical ft = 20 MHz Fully characterized at 125 oC 3 2 1 Applications TO-3P Audio power amplifier Description Figure 1. Internal schematic diagram The device is a NPN transistor manufactured using new BiT

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2STC4467

2STC4468 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage VCEO = 140 V Complementary to 2STA1695 Typical ft = 20 MHz Fully characterized at 125 oC 3 Application 2 1 Audio power amplifier TO-3P Description Figure 1. Internal schematic diagram The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for

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2STC4467

2STC4793 NPN power bipolar transistor Preliminary data Features High breakdown voltage VCEO = 230 V Complementary to 2STA1837 High transition frequency, typical fT = 100 MHz Applications Audio power amplifier 3 2 Drive stage amplifier 1 TO-220FP Description This device is a NPN transistor manufactured using new PB-HDC (power bipolar high density Figu

Otros transistores... 2STA1694, 2STA1695, 2STA1943, 2STA1962, 2STA2120, 2STA2121, 2STA2510, 2STC2510, 2SC5198, 2STC4468, 2STC5200, 2STC5242, 2STC5949, 2STD1665, 2STF1340, 2STF1360, 2STF1550