All Transistors. 2STC5200 Datasheet

 

2STC5200 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2STC5200

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 230 V

Maximum Collector-Emitter Voltage |Vce|: 230 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 30 MHz

Collector Capacitance (Cc): 150 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: TO264

2STC5200 Transistor Equivalent Substitute - Cross-Reference Search

 

2STC5200 Datasheet (PDF)

1.1. 2stc5200.pdf Size:182K _st

2STC5200
2STC5200

2STC5200 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage VCEO > 230V Complementary to 2STA1943 Fast-switching speed Typical fT = 30 MHz Application 3 2 1 Audio power amplifier TO-264 Description This device is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulting transistor

4.1. 2stc5242.pdf Size:183K _st

2STC5200
2STC5200

2STC5242 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage VCEO = 230 V Complementary to 2STA1962 Fast-switching speed Typical fT = 30 MHz Application 3 2 1 Audio power amplifier TO-3P Description This device is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulting transistor

 5.1. 2stc5949.pdf Size:148K _st

2STC5200
2STC5200

2STC5949 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage VCEO = 250 V Complementary to 2STA2121 Typical ft = 25 MHz Fully characterized at 125 oC Application Audio power amplifier TO-264 Description The device is a NPN transistor manufactured Figure 1. Internal schematic diagram using new BiT-LA (Bipolar transistor for linear amplifier)

5.2. 2stc5948.pdf Size:151K _st

2STC5200
2STC5200

2STC5948 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage VCEO = 250 V Complementary to 2STA2120 Typical ft = 25 MHz Fully characterized at 125 oC 3 Application 2 1 Audio power amplifier TO-3P Description The device is a NPN transistor manufactured Figure 1. Internal schematic diagram using new BiT-LA (Bipolar transistor for linear amp

Datasheet: 2STA1943 , 2STA1962 , 2STA2120 , 2STA2121 , 2STA2510 , 2STC2510 , 2STC4467 , 2STC4468 , 2SC2625 , 2STC5242 , 2STC5949 , 2STD1665 , 2STF1340 , 2STF1360 , 2STF1550 , 2STF2220 , 2STF2340 .

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