2STC5200 Todos los transistores

 

2STC5200 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2STC5200
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 150 W
   Tensión colector-base (Vcb): 230 V
   Tensión colector-emisor (Vce): 230 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 15 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 30 MHz
   Capacitancia de salida (Cc): 150 pF
   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: TO264
 

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2STC5200 Datasheet (PDF)

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 2stc5200.pdf pdf_icon

2STC5200

2STC5200High power NPN epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO > 230V Complementary to 2STA1943 Fast-switching speed Typical fT = 30 MHzApplication321 Audio power amplifierTO-264DescriptionThis device is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulting

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 2stc5242.pdf pdf_icon

2STC5200

2STC5242High power NPN epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = 230 V Complementary to 2STA1962 Fast-switching speed Typical fT = 30 MHzApplication321 Audio power amplifier TO-3PDescriptionThis device is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resultin

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 2stc5948.pdf pdf_icon

2STC5200

2STC5948High power NPN epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = 250 V Complementary to 2STA2120 Typical ft = 25 MHz Fully characterized at 125 oC3Application21 Audio power amplifierTO-3PDescriptionThe device is a NPN transistor manufactured Figure 1. Internal schematic diagramusing new BiT-LA (Bipolar transistor for

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 2stc5949.pdf pdf_icon

2STC5200

2STC5949High power NPN epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = 250 V Complementary to 2STA2121 Typical ft = 25 MHz Fully characterized at 125 oCApplication Audio power amplifierTO-264DescriptionThe device is a NPN transistor manufactured Figure 1. Internal schematic diagramusing new BiT-LA (Bipolar transistor for linear

MOSTRAR MÁS

Otros transistores... 2STA1943 , 2STA1962 , 2STA2120 , 2STA2121 , 2STA2510 , 2STC2510 , 2STC4467 , 2STC4468 , S9013 , 2STC5242 , 2STC5949 , 2STD1665 , 2STF1340 , 2STF1360 , 2STF1550 , 2STF2220 , 2STF2340 .

History: S9013G | FJD5553

 

 
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